4.8 Article

Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga2O3

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Engineering, Electrical & Electronic

Low Turn-On Voltage and High Breakdown Voltage β-Ga2O3 Diode With Fin Channel and Ohmic Contact Anode

Yuxi Wei et al.

Summary: In this study, a novel β-Ga2O3 diode with a Fin channel, ohmic contact anode, and composite field-plate (FOCF) is proposed to achieve a low turn-on voltage (V-ON) and high breakdown voltage (BV). The diode's electrical characteristics were investigated using Sentaurus TCAD simulation. The FOCF diode combines a Fin channel with an ohmic contact anode to achieve metal-insulator-semiconductor (MIS)-like characteristics and a low V-ON, while a composite field-plate (CF) consisting of Al2O3 and SiNx dual-dielectric layers improves BV. The resulting diode has a low V-ON of 0.45 V, high BV of 2204 V, and a Baliga's figure of merit (BFOM) up to 1.47 GW/cm(2), enhancing the application potential for high-power and low-loss β-Ga2O3 diodes.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2023)

Article Chemistry, Multidisciplinary

Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC

Filippo Giannazzo et al.

Summary: In this study, 2D/3D heterojunction diodes were fabricated using pulsed laser deposition. The doping levels of SiC surfaces were varied to investigate the transport properties of MoS2. The results showed that surface doping of SiC can significantly influence the current injection across the heterojunctions, resulting in highly rectifying behavior and enhanced current injection. The dominant mechanisms governing current flow were identified, and the effective barriers for different contacts were determined.

ADVANCED MATERIALS INTERFACES (2023)

Article Multidisciplinary Sciences

Ultra-wide bandgap semiconductor Ga2O3 power diodes

Jincheng Zhang et al.

Summary: In this study, Ga2O3 heterojunction PN diodes are demonstrated to overcome the challenges of high breakdown voltage and low doping, achieving high power figure-of-merit and showing great potential for next-generation power electronics applications.

NATURE COMMUNICATIONS (2022)

Article Physics, Applied

A Weyl semimetal WTe2/GaAs 2D/3D Schottky diode with high rectification ratio and unique photocurrent behavior

Jina Wang et al.

Summary: The van der Waals heterojunction based on 2D Weyl semimetals shows promise in improving photon detection and response speed, and can be widely used in various systems.

APPLIED PHYSICS LETTERS (2022)

Article Physics, Applied

Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs

Man Hoi Wong et al.

Summary: An anomalous diode-like turn-on behavior was observed in the drain characteristics of current aperture vertical beta -Ga2O3 transistors, which was attributed to electron barrier created by negative fixed charges in the aperture opening. The study proposed possible role of point-defect diffusion in the performance and reliability of ion-implanted Ga2O3 devices.

APPLIED PHYSICS LETTERS (2021)

Article Chemistry, Multidisciplinary

Direct Optoelectronic Imaging of 2D Semiconductor-3D Metal Buried Interfaces

Kiyoung Jo et al.

Summary: This study reports the direct measurement of electrical and optical responses of 2D semiconductor-metal buried interfaces using a metal-assisted transfer technique. Contacting MoS2 with metal induces strain and charge transfer, resulting in improved contact resistance.

ACS NANO (2021)

Article Physics, Applied

Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga2O3

A. Y. Polyakov et al.

Summary: The study investigates the effects of 20MeV proton irradiation on the electrical properties of lightly Sn doped beta-Ga2O3 crystals, revealing a decrease in net donor density, introduction of deep electron traps, and deep acceptors. The results suggest a significant impact of crystalline orientation on the properties after proton irradiation.

JOURNAL OF APPLIED PHYSICS (2021)

Article Physics, Applied

Realization of highly rectifying Schottky barrier diodes and pn heterojunctions on κ-Ga2O3 by overcoming the conductivity anisotropy

M. Kneiss et al.

Summary: Novel devices based on orthorhombic kappa-Ga2O3 show potential for solar blind infrared detection or high-electron mobility transistors. Current transport parallel to the growth direction was achieved through different contact layers, with significant current flow through the ohmic contacts. Schottky barrier diodes and p n-heterojunctions exhibited rectification ratios of up to seven orders of magnitude.

JOURNAL OF APPLIED PHYSICS (2021)

Review Materials Science, Multidisciplinary

Physics of electron emission and injection in two-dimensional materials: Theory and simulation

Yee Sin Ang et al.

Summary: Electrically contacting two-dimensional materials is crucial for studying fundamental charge transport physics and designing high-performance devices. Recent developments in theory and computational simulation of charge injection and electrical contact formation in 2D materials are summarized, focusing on the importance of these processes for the performance and functionality of devices.

INFOMAT (2021)

Article Physics, Applied

Exploring conduction mechanism and photoresponse in P-GaN/n-MoS2 heterojunction diode

Monika Moun et al.

JOURNAL OF APPLIED PHYSICS (2020)

Article Engineering, Electrical & Electronic

Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions

Hehe Gong et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

Proceedings Paper Engineering, Electrical & Electronic

Ga2O3 Thin Films by Sol-Gel Method and its Optical Properties

Lay Boon Cheah et al.

2ND INTERNATIONAL CONFERENCE ON APPLIED PHOTONICS AND ELECTRONICS 2019 (INCAPE 2019) (2020)

Article Nanoscience & Nanotechnology

Two-Dimensional/Three-Dimensional Schottky Junction Photovoltaic Devices Realized by the Direct CVD Growth of vdW 2D PtSe2 Layers on Silicon

Mashiyat Sumaiya Shawkat et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

Review Physics, Condensed Matter

Growth and fundamentals of bulk beta-Ga2O3 single crystals

H. F. Mohamed et al.

JOURNAL OF SEMICONDUCTORS (2019)

Article Chemistry, Multidisciplinary

Single Pixel Black Phosphorus Photodetector for Near-Infrared Imaging

Jinshui Miao et al.

Article Chemistry, Multidisciplinary

Fast, Self-Driven, Air-Stable, and Broadband Photodetector Based on Vertically Aligned PtSe2/GaAs Heterojunction

Long-Hui Zeng et al.

ADVANCED FUNCTIONAL MATERIALS (2018)

Article Chemistry, Physical

A comparative study of wet etching and contacts on ((2)over-bar01) and (010) oriented beta-Ga2O3

Soohwan Jang et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2018)

Review Physics, Applied

A review of Ga2O3 materials, processing, and devices

S. J. Pearton et al.

APPLIED PHYSICS REVIEWS (2018)

Review Nanoscience & Nanotechnology

Recent Advances in β-Ga2O3-Metal Contacts

Ya-Wei Huan et al.

NANOSCALE RESEARCH LETTERS (2018)

Review Chemistry, Multidisciplinary

Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides

Jose Ramon Duran Retamal et al.

CHEMICAL SCIENCE (2018)

Article Nanoscience & Nanotechnology

Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk

Akash Laturia et al.

NPJ 2D MATERIALS AND APPLICATIONS (2018)

Article Chemistry, Multidisciplinary

Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts

Yuqiang Ma et al.

ACS NANO (2017)

Article Nanoscience & Nanotechnology

Air-Stable Humidity Sensor Using Few-Layer Black Phosphorus

Jinshui Miao et al.

ACS APPLIED MATERIALS & INTERFACES (2017)

Article Physics, Applied

Intrinsic electron mobility limits in β-Ga2O3

Nan Ma et al.

APPLIED PHYSICS LETTERS (2016)

Article Engineering, Electrical & Electronic

Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V

Man Hoi Wong et al.

IEEE ELECTRON DEVICE LETTERS (2016)

Article Physics, Applied

Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer

Man Hoi Wong et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2016)

Review Multidisciplinary Sciences

2D materials and van der Waals heterostructures

K. S. Novoselov et al.

SCIENCE (2016)

Article Engineering, Electrical & Electronic

Chlorine-based dry etching of β-Ga2O3

Jack E. Hogan et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)

Article Nanoscience & Nanotechnology

Black Phosphorus Schottky Diodes: Channel Length Scaling and Application as Photodetectors

Jinshui Miao et al.

ADVANCED ELECTRONIC MATERIALS (2016)

Article Multidisciplinary Sciences

Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer

Yang Yu et al.

SCIENTIFIC REPORTS (2016)

Article Materials Science, Multidisciplinary

Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals

M. Schubert et al.

PHYSICAL REVIEW B (2016)

Article Nanoscience & Nanotechnology

Creating a Stable Oxide at the Surface of Black Phosphorus

M. T. Edmonds et al.

ACS APPLIED MATERIALS & INTERFACES (2015)

Article Chemistry, Multidisciplinary

High-Performance Monolayer WS2 Field-Effect Transistors on High-κ Dielectrics

Yang Cui et al.

ADVANCED MATERIALS (2015)

Article Physics, Applied

Layer-transferred MoS2/GaN PN diodes

Edwin W. Lee et al.

APPLIED PHYSICS LETTERS (2015)

Article Physics, Applied

Dopant activation in Sn-doped Ga2O3 investigated by X-ray absorption spectroscopy

S. C. Siah et al.

APPLIED PHYSICS LETTERS (2015)

Article Physics, Applied

Anisotropic thermal conductivity in single crystal β-gallium oxide

Zhi Guo et al.

APPLIED PHYSICS LETTERS (2015)

Article Chemistry, Multidisciplinary

Carrier transport at the metal-MoS2 interface

Faisal Ahmed et al.

NANOSCALE (2015)

Review Chemistry, Physical

Electrical contacts to two-dimensional semiconductors

Adrien Allain et al.

NATURE MATERIALS (2015)

Article Materials Science, Multidisciplinary

Controlling the Schottky barrier at MoS2/metal contacts by inserting a BN monolayer

Mojtaba Farmanbar et al.

PHYSICAL REVIEW B (2015)

Article Chemistry, Multidisciplinary

Mono- and Bilayer WS2 Light-Emitting Transistors

Sanghyun Jo et al.

NANO LETTERS (2014)

Article Nanoscience & Nanotechnology

Solar-energy conversion and light emission in an atomic monolayer p-n diode

Andreas Pospischil et al.

NATURE NANOTECHNOLOGY (2014)

Article Chemistry, Multidisciplinary

Metal/Metal-Oxide Interfaces: How Metal Contacts Affect the Work Function and Band Structure of MoO3

Mark T. Greiner et al.

ADVANCED FUNCTIONAL MATERIALS (2013)

Article Physics, Applied

Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes

Steven Chuang et al.

APPLIED PHYSICS LETTERS (2013)