Position-reconfigurable pinning for magnetic domain wall motion

Precise control of magnetic domain wall (DW) motion is crucial for DW-based spintronic devices. To date, artificially designed DW pinning sites, such as notch structures, have been used to precisely control the DW position. However, the existing DW pinning methods are not reconfigurable because they cannot change the position of pinning site after being fabricated. Herein, a novel method for attaining reconfigurable DW pinning is proposed, which relies on the dipolar interactions between two DWs located in different magnetic layers. Repulsion between DWs in both layers was observed, indicating that one of the DWs acts as a pinning barrier for the other. Because the DW is mobile in the wire, the position of pinning can be modulated, thereby resulting in reconfigurable pinning that was experimentally demonstrated for current-driven DW motion. These findings provide additional controllability of DW motion, which may expand the functionality of DW-based devices to broader spintronic applications.

Automated summary

Precise control of magnetic domain wall motion is crucial for spintronic devices. A novel method for reconfigurable domain wall pinning is proposed, based on the dipolar interactions between two domain walls in different magnetic layers. The repulsion between the domain walls allows for modulating the pinning position, which was experimentally demonstrated for current-driven motion. These findings expand the functionality of domain wall-based devices in spintronic applications.