Improving performance of ZnO Schottky photodetector by inserting MXenes modified-layer

The development of low-cost and high-performance ZnO Schottky photodetectors (PDs) has drawn intensive attention, but still a challenge due to their poor conductivity and low light utilization efficiency. Here, we introduce Ti 3 C 2 T X into ZnO films to fabricate Schottky UV PDs via facile spin-coated method. The fabricated ZnO/Ti 3 C 2 T X /ZnO compound film shows outstanding performance on photocurrent, responsivity, noise equivalent power (NEP), normalized detection rate (D *), and linear dynamic region (LDR), compared with the original ZnO device. The photocurrent is significantly increased by 466%, and the responsivity is improved by one order of magnitude. In addition, it exhibits relatively low NEP (5.99 x 10 -11 W), strong D * (2.53 x 10 9 Jones), and high LDR (28 dB). The superior performance is ascribed to the enhanced conductivity and light absorption of ZnO film after introduction of Ti 3 C 2 T X modification layer, leading to simultaneously faster electron transfer, lower the radiation recombination of electron and holes on the ZnO/Ti 3 C 2 T X /ZnO compound film. This work provides a facile way to develop low-cost and highperformance ZnO Schottky PDs. (c) 2023 Published by Elsevier B.V. on behalf of Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences.

Automated summary

Low-cost and high-performance ZnO Schottky photodetectors (PDs) were fabricated by introducing Ti3C2TX into ZnO films via a facile spin-coated method. The ZnO/Ti3C2TX/ZnO compound film showed significantly improved performance on photocurrent, responsivity, noise equivalent power (NEP), normalized detection rate (D *), and linear dynamic region (LDR) compared with the original ZnO device. The enhanced conductivity and light absorption of the ZnO film after Ti3C2TX modification contributed to the superior performance.