CRRC: Coordinating Retention Errors, Read Disturb Errors and Huffman Coding on TLC NAND Flash Memory

Nowadays, TLC NAND flash memory has become a mainstream storage medium because of its large capacity and low cost. However, TLC NAND flash memory could have the reliability problem (such as the retention errors and the read disturb errors), as the cell capacity increases. Because the reasons of the retention errors and the read disturb errors are due to 8 different states in a TLC cell, we will propose a method to coordinate the retention errors, the read disturb errors and the Huffman coding on TLC NAND flash memory by removing some unsuitable states when different data accesses are considered. According to the experimental results, the proposed method can utilize the compression of the Huffman coding to improve the performance. In addition, the proposed method can also remove the unsuitable states that are susceptible to the retention errors and the read disturb errors to enhance the reliability of TLC NAND flash memory.

Automated summary

Nowadays, TLC NAND flash memory is widely used due to its large capacity and low cost. However, with the increase of cell capacity, reliability issues such as retention errors and read disturb errors may occur. To address these issues, a method is proposed to coordinate retention errors, read disturb errors and Huffman coding on TLC NAND flash memory by removing unsuitable states during different data accesses. Experimental results show that the proposed method can improve performance through Huffman coding compression and enhance the reliability of TLC NAND flash memory by removing vulnerable states.