4.6 Article

Measurement of the conduction band spin-orbit splitting in WSe2 and WS2 monolayers

期刊

PHYSICAL REVIEW B
卷 107, 期 24, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.107.245407

关键词

-

向作者/读者索取更多资源

We investigated charge tunable devices based on WSe2 and WS2 monolayers encapsulated in hexagonal boron nitride. We observed a weaker-intensity optical transition in photoluminescence measurements when the monolayers were electrostatically doped with electrons. Through a detailed characterization of this photoluminescence line, we identified it as an impurity-assisted radiative recombination of the intervalley negatively charged exciton (triplet trion). Our measurements also revealed the spin-orbit splitting energy difference between the emitted photons from the two possible recombination processes of the same triplet trion.
We have investigated charge tunable devices based on WSe2 and WS2 monolayers encapsulated in hexag-onal boron nitride. In addition to the well-known radiative recombination of neutral and charged excitons, stationary photoluminescence measurements highlight a weaker-intensity optical transition that appears when the monolayer is electrostatically doped with electrons. We have carried out a detailed characterization of this photoluminescence line based on its doping dependence, its variation as a function of the optical excitation power, its polarization characteristics, and its g factor measured under longitudinal magnetic field. We interpret this luminescence peak as an impurity-assisted radiative recombination of the intervalley negatively charged exciton (triplet trion). In addition to the standard direct recombination, the triplet trion has a second recom-bination channel triggered by elastic scattering off the short-range impurity potential. The energy difference between the emitted photons from these two possible recombination processes of the same triplet trion is simply the single-particle conduction band spin-orbit splitting Ac. We measure Ac = 12 & PLUSMN; 0.5 meV for the WSe2 monolayer and Ac = 12 & PLUSMN; 1 meV for the WS2 monolayer. These results demonstrate the importance of second-order exciton recombination processes in transition-metal dichalcogenide structures.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据