A UV-emitting and -sensing device from ZnGa2O4 oxide layer in metal-oxide-semiconductor structure

The ultraviolet (UV) spectrum is considered a harmful light yet useful with the correct amount of exposure for industrial and academic applications. Herein, a dual-mode device, ultraviolet-A (UV-A) emitting and solar-blind UV photo-detecting, was fabricated using a ZnGa2O4 (ZGO) in a metal-oxidesemiconductor (MOS) structure. The ZGO film was deposited on the p thorn -Si substrate through a facile one-step annealing all-solution precursor process. The strategy to achieve bi-functionality was demonstrated by changing the electric configurations. Under a sinusoidal AC power, it emits broad UV-A light, which is optically referred to as the impact excitation of holes and electrons within the ZGO lattice. However, under UV irradiation, it presents a decent photo-current response with an acceptable UV/ visible rejection ratio and a millisecond response with the help of an external electric field from DC bias voltage. Our work could provide a feasible method for developing multifunctional electronic devices based on MOS structure.& COPY; 2022 Vietnam National University, Hanoi. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).

Automated summary

A dual-mode device capable of emitting UV-A light and detecting solar-blind UV light was fabricated using a ZnGa2O4 (ZGO) film in a metal-oxide-semiconductor (MOS) structure. The device demonstrated bi-functionality by changing the electric configurations. This research provides a feasible method for developing multifunctional electronic devices based on MOS structure.