Inherent area-selective atomic layer deposition of ZnS

Atomic layer deposition processes with inherent substrate selectivity are more straightforward for area-selective atomic layer deposition (AS-ALD) than approaches using surface passivation or activation with self-assembled monolayers (SAMs), small molecule inhibitors (SMIs) or seed layers. Here, ALD of ZnS using elemental zinc and sulfur as precursors is reported to have excellent inherent selectivity. At 400-500 & DEG;C for 250 cycles, substantial ZnS growth was observed on Ti and TiO2 surfaces while no growth was measured on native SiO2 and Al2O3 surfaces. On TiO2, the ZnS growth rate remains constant at 1.0 & ANGS; per cycle at temperatures of 400-500 & DEG;C. On Ti, in contrast, the initial growth rate increases significantly from 1.2 & ANGS; per cycle at 350 & DEG;C to 6.2 & ANGS; per cycle at 500 & DEG;C. The high growth rates on Ti are believed to be caused by CVD-like growth during the early ALD cycles, arising from the reservoir effect of the Ti layer for Zn atoms. After the first 100 cycles, the growth rate decreases from 3.5 to 1.0 & ANGS; per cycle, the same as the growth rate on TiO2. Selective adsorption of sulfur on TiO2 over Al2O3 and SiO2 is assumed to be the selectivity mechanism on TiO2. Self-aligned deposition of ZnS was successfully demonstrated on a micrometer-scale Ti/native SiO2 pattern and on a nanometer-scale TiO2/Al2O3 pattern at 450 & DEG;C for 250 cycles; ZnS films with a thickness of & SIM;80 nm were selectively deposited on Ti over native SiO2, and ZnS films with a thickness of & SIM;23 nm were selectively deposited on TiO2 over Al2O3.

Automated summary

Atomic layer deposition (ALD) of ZnS using elemental zinc and sulfur as precursors demonstrates excellent inherent selectivity on Ti and TiO2 surfaces, but no growth is observed on native SiO2 and Al2O3 surfaces. The growth rate on Ti remains constant at 1.0Å per cycle at temperatures of 400-500°C, while on TiO2, the growth rate increases significantly. The selective adsorption of sulfur on TiO2 over Al2O3 and SiO2 is assumed to be the selectivity mechanism.