Unveiling Retention Physical Mechanism of Ge-rich GST ePCM Technology

Article Physics, Multidisciplinary

Metrics for Quantification of By-Process Segregation in Ge-Rich GST

Elisa Petroni et al.

Summary: Ge-rich GST alloys show great potential in phase-change memory for automotive applications, but their performance and process optimization require thorough physical characterization. Microscopic investigations, utilizing EELS and TEM analysis along with statistical data post-processing, provide detailed understanding of local material modulations and introduce new metrics for process engineering.

FRONTIERS IN PHYSICS (2022)

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Proceedings Paper Engineering, Electrical & Electronic

Characterization of reset state through energy activation study in Ge-GST based ePCM

Matteo Baldo et al.

Summary: This study presents a detailed investigation of the reset state of embedded phase change memories (ePCM) based on Ge-rich Ge2Sb2Te5 (Ge-GST) alloys. The resistance drift and conduction mechanisms are assessed under different bake times and temperatures. The evolution of the activation energy for conduction in the Ge-GST compound is described for the first time. The dependence of activation energy and resistance value on the forming state is also evaluated.

ESSDERC 2022 - IEEE 52ND EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) (2022)

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Proceedings Paper Computer Science, Hardware & Architecture

Non Volatile Memory in Advanced Smart Power technology: product requirements and integration solutions

Giuseppe Croce

Summary: The increasing complexity of chip functionality and the demand for higher configurability are driving developments in emerging memories. This paper focuses on the benefits of ePCM and discusses the successful integration of PCM in the latest BCD platforms through promising results obtained on test chips and real power products.

2022 14TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW 2022) (2022)

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Proceedings Paper Computer Science, Hardware & Architecture

Modeling Environment for Ge-rich GST Phase Change Memory Cells

M. Baldo et al.

Summary: This paper presents a detailed TCAD model for embedded PCM, and compares it with traditional standalone memory. The results show that Ge enrichment of the active GeSbTe material can optimize the performance and reliability of embedded PCM.

2022 14TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW 2022) (2022)

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Proceedings Paper Computer Science, Artificial Intelligence