期刊
2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS
卷 -, 期 -, 页码 -出版社
IEEE
DOI: 10.1109/IRPS48203.2023.10118155
关键词
Drift; Ge-rich GST; Phase Change Memory
This work presents a comprehensive study on the retention of set and reset states in Ge-rich Phase Change Memory by coupling electrical and physical characterizations. The presence of amorphous residuals inside the active region of PCM devices is demonstrated for the first time through High Resolution Scanning Transmission Electron Microscopy. The role of such formations was studied using electrical characterization and supported by modeling analysis. The retention physics has been analytically modeled with the same framework for both low and high state resistive behavior.
In this work, a comprehensive study of Ge-rich Phase Change Memory set and reset state retention realized by coupling electrical and physical characterizations is presented. The presence of amorphous residuals inside the active region of PCM devices is, for the first time, demonstrated through High Resolution Scanning Transmission Electron Microscopy. The role of such formations was studied by means of electrical characterization and supported by modeling analysis. By comparing the low and high state resistive behavior the retention physics has been analytically modeled with the same framework for both states.
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