☆ 3.8 Proceedings Paper

Reliability challenges in Forksheet Devices

2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS (2023)

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets

E. Bury et al.

Summary: This paper evaluates the reliability concerns of FSH FETs compared to NSH FETs and concludes that both types have comparable reliability. Theoretical calculations also show that the FSH architecture does not introduce additional reliability concerns.

2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) (2022)

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Proceedings Paper Engineering, Multidisciplinary

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs

Michiel Vandemaele et al.

Summary: Forksheet (FS) FETs are a new transistor architecture that utilizes vertically stacked nFET and pFET sheets with a dielectric wall, reducing p-to-n separation. Hot-carrier degradation (HCD) simulations show that both FS FETs and NS FETs can reduce HCD with increasing sheet width when considering interface state generation. Furthermore, an initial assessment suggests that the impact of oxide defect charging in the FS wall can be controlled under operating conditions.

2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) (2022)

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Proceedings Paper Engineering, Electrical & Electronic

Comparison of Electrical Performance of Co-Integrated Forksheets and Nanosheets Transistors for the 2nm Technological Node and Beyond

R. Ritzenthaler et al.

Summary: This study systematically compared the DC performance of Forksheets and Nanosheets transistors, showing that their short channel control and transport properties are comparable. The gate stack reliability is not affected by the fabrication process of Forksheet dielectric wall. Additionally, both Forksheets and Nanosheets demonstrate good performance for analog applications.

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2021)

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Article Engineering, Electrical & Electronic

A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I-V, C-V, and G-V Measurements

Andrea Padovani et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)

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Proceedings Paper Engineering, Electrical & Electronic

Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs

S. Tyaginov et al.

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2019)

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Article Engineering, Electrical & Electronic

Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs

Stanislav Tyaginov et al.

IEEE ELECTRON DEVICE LETTERS (2016)

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Article Engineering, Electrical & Electronic

A capacitance-based methodology for work function extraction of metals on high-κ

R Jha et al.

IEEE ELECTRON DEVICE LETTERS (2004)

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Reliability challenges in Forksheet Devices

相关参考文献

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs

Comparison of Electrical Performance of Co-Integrated Forksheets and Nanosheets Transistors for the 2nm Technological Node and Beyond

A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I-V, C-V, and G-V Measurements

Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs

Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs

A capacitance-based methodology for work function extraction of metals on high-κ

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