4.7 Article

3-D Raman Imaging Using Time-Resolving CMOS SPAD Line Sensor and 2-D Mapping

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIM.2023.3284953

关键词

3-D Raman imaging; complementary metal- oxide-semiconductor (CMOS) single-photon avalanche diode (SPAD); depth analysis; depth-resolving Raman spectrometer; time-correlated single photon counting (TCSPC)

向作者/读者索取更多资源

In this article, a time-resolved Raman spectrometer based on a CMOS SPAD line sensor is presented for 3-D chemical image reconstruction using 2-D scanning data. The sensor has 256-spectral channels with adjustable resolution and is fabricated in 110-nm CMOS technology. The study demonstrates the importance of the instrument response function (IRF) and the time gate window width in determining the accuracy of axial (depth) information.
The capability of Raman imaging to produce 2-D and 3-D chemical presentations of samples has gained a lot of interest in different application fields. In this article, we present a 3-D chemical image reconstruction based on 2-D scanning of a sample utilizing a time-resolved Raman spectrometer based on a complementary metal-oxide-semiconductor (CMOS) single photon avalanche diode (SPAD) line sensor. The 2-D scanning data contain the lateral information (XY plane), whereas the time-of-arrival data of the Raman photons measured by the sensor carry the axial information (i.e., depth information, Z-axis). The sensor is fabricated in 110-nm CMOS technology. It has 256-spectral channels, and each channel has its own 7-bit ON-chip time-to-digital converter (TDC) with an adjustable resolution from 25 to 65 ps. In addition to the 3-D chemical reconstruction of the scanned sample, we have shown the ability to retrieve depth profiling information of each scanned pixel, such as the boundaries and middle points of any selected layer over the depth range of the scanned object by means of a single measurement for each scanned pixel. In addition, we have discussed the system components and the postprocessing parameters that affect the depth profiling accuracy and the 3-D reconstruction operation the most. Results showed that the instrument response function (IRF) of the system and the time gate window width in a postprocessing phase are playing the most important role in determining the axial (depth) accuracy. We believe that our system will enable a whole new class of Raman applications that will allow simultaneous 3-D chemical geometric representation at the centimeter level during Raman operations.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据