Room-Temperature Organic Passivation for GaN-on-Si HEMTs With Improved Device Stability

In this work, we report an effective room-temperature passivation strategy for GaN-on-Si high-electron-mobility transistors (HEMTs) to improve device stability by introducing a spin-coated CYTOP organic passivation layer. This CYTOP coating can suppress the interface states of the devices to a low level of similar to 10(12) cm(-2).eV(-1) at a shallow energy trap of similar to 0.30 eV. As a result, improved device stability is realized, featuring reduced leakage current, smaller voltage hysteresis, reduced current collapse, and mitigated device degradation after long-term electrical stress. Besides, it is found that the CYTOP-passivated HEMT can operate with stable rectification behavior under an elevated temperature of 250 C-degrees, confirming the high-temperature robustness of this organic passivation. These results highlight the potential of such room-temperature passivation strategy for further applications in electronic systems under complex conditions and harsh environments.

Automated summary

In this work, an effective room-temperature passivation strategy for GaN-on-Si high-electron-mobility transistors (HEMTs) is reported, which improves device stability by introducing a spin-coated CYTOP organic passivation layer. The CYTOP coating suppresses the devices' interface states to a low level at a shallow energy trap. As a result, improved device stability is achieved, along with reduced leakage current, smaller voltage hysteresis, reduced current collapse, and mitigated device degradation after long-term electrical stress. It is also found that the CYTOP-passivated HEMT can exhibit stable rectification behavior under elevated temperatures, demonstrating the high-temperature robustness of this organic passivation. These results highlight the potential of this room-temperature passivation strategy for electronic systems in complex conditions and harsh environments.