期刊
AIP ADVANCES
卷 6, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4964300
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资金
- Free State of Saxony [1001493891/2939]
Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film-and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers. (C) 2016 Author(s).
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