Surface anisotropic magnetoresistance in the antiferromagnetic semiconductor CrSb2

We report on large anisotropic magnetoresistance (AMR) in surface states of an antiferromagnetic semicon-ductor CrSb2. The low-temperature measurement of angle-dependent magnetoresistance (ADMR) is performed in high magnetic fields up to 24 T. At 1.4 K, where the surface conduction is dominant, ADMR exhibits clear twofold symmetry consistent with AMR due to magnetic-field-induced change of antiparallel magnetic structure. The AMR magnitude reaches 9.3% despite the small angle dependence of the net magnetic moments, suggesting strong spin-orbit interaction in the surface conduction layer.

Automated summary

We report a large anisotropic magnetoresistance (AMR) in the surface states of antiferromagnetic semiconductor CrSb2. The angle-dependent magnetoresistance (ADMR) measurements were performed at low temperatures and high magnetic fields up to 24 T. At 1.4 K, where surface conduction is dominant, ADMR shows clear twofold symmetry consistent with AMR caused by magnetic-field-induced change in antiparallel magnetic structure. Despite the small angle dependence of net magnetic moments, the AMR magnitude reaches 9.3%, suggesting strong spin-orbit interaction in the surface conduction layer.