期刊
AIP ADVANCES
卷 6, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4953917
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资金
- Basic Science Research Program through the National Research Foundation (NRF) of Korea - Ministry of Education of Korea [2014R1A1A2054092]
- transfer machine specialized lighting core technology development professional manpower training project - Ministry of Trade, Industry & Energy (MOTIE) of Korea [N0001363]
- Korea Evaluation Institute of Industrial Technology (KEIT) [N0001363] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The current transport mechanism of graphene formed on AlxGa1-xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current-voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the SchottkyMott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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