相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Efficiency droop in light-emitting diodes: Challenges and countermeasures
Jaehee Cho et al.
LASER & PHOTONICS REVIEWS (2013)
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
Justin Iveland et al.
PHYSICAL REVIEW LETTERS (2013)
Experimental determination of current spill-over and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes
Byung-Jun Ahn et al.
APPLIED PHYSICS LETTERS (2012)
Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency
Guan-Bo Lin et al.
APPLIED PHYSICS LETTERS (2012)
Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells
Martin F. Schubert et al.
APPLIED PHYSICS LETTERS (2010)
InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes
X. Ni et al.
APPLIED PHYSICS LETTERS (2010)
Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them
X. Ni et al.
JOURNAL OF APPLIED PHYSICS (2010)
Efficiency droop in nitride-based light-emitting diodes
Joachim Piprek
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)
The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes
X. Ni et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2010)
On resonant optical excitation and carrier escape in GaInN/GaN quantum wells
Martin F. Schubert et al.
APPLIED PHYSICS LETTERS (2009)
Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
Kenneth J. Vampola et al.
APPLIED PHYSICS LETTERS (2009)
Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes
Sang-Heon Han et al.
APPLIED PHYSICS LETTERS (2009)
Performance of high-power III-nitride light emitting diodes
G. Chen et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2008)
Hot phonon effect on electron velocity saturation in GaN: A second look
Jacob Khurgin et al.
APPLIED PHYSICS LETTERS (2007)
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
Shigefusa F. Chichibu et al.
NATURE MATERIALS (2006)
High-power and reliable operation of vertical light-emitting diodes on bulk GaN
XA Cao et al.
APPLIED PHYSICS LETTERS (2004)
Hot-phonon temperature and lifetime in a biased AlxGa1-xN/GaN channel estimated from noise analysis -: art. no. 035338
A Matulionis et al.
PHYSICAL REVIEW B (2003)
Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes
XA Cao et al.
APPLIED PHYSICS LETTERS (2003)
Temperature and injection current dependence of electroluminescence intensity in green and blue InGaN single-quantum-well light-emitting diodes
A Hori et al.
JOURNAL OF APPLIED PHYSICS (2003)
Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures
V Fiorentini et al.
APPLIED PHYSICS LETTERS (2002)
Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes
A Hori et al.
APPLIED PHYSICS LETTERS (2001)
Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes
CM Lee et al.
JOURNAL OF APPLIED PHYSICS (2001)