期刊
AIP ADVANCES
卷 6, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4941040
关键词
-
资金
- National Natural Science Foundation [11204238]
- Natural Science Foundation of Shaanxi Province, China [2011JQ6015]
- National University Research Fund [GK261001009]
- Changjiang Scholar and Innovative Research Team [IRT_ 14R33]
- Overseas Talent Recruitment Project [B14041]
- Chinese National 1000-talent-plan program
The energy band alignment between pulsed-laser-deposited TiO2 and FTO was firstly characterized using high-resolution X-ray photoelectron spectroscopy. A valence band offset (VBO) of 0.61 eV and a conduction band offset (CBO) of 0.29 eV were obtained across the TiO2/FTO heterointerface. With annealing process, the VBO and CBO across the heterointerface were found to be -0.16 eV and 1.06 eV, respectively, with the alignment transforming from type-I to type-II. The difference in the band alignment is believed to be dominated by the core level down-shift of the FTO substrate, which is a result of the oxidation of Sn. Current-voltage test has verified that the band alignment has a significant effect on the current transport of the heterojunction. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据