Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

We report on the growth of an In0.30Ga0.70As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 mu m thick buffer comprising a Ge layer, a GaAs layer and an In-AlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 mu 0.3) x 10(7) cm(-2) with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 mu m long channel length transistors are fabricated from the wafer with IDS of 70 mu A/mu m and g(m) of above 60 mu S/mu m, demonstrating the high quality of the grown materials. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).