Solar-blind avalanche photodetector based on epitaxial Ga2O3/La0.8Ca0.2MnO3 pn heterojunction with ultrahigh gain

Ga2O3-based avalanche photodetectors (APDs) have gained increasing attention because of their excellent photoelectric conversion capability in the UV solar-blind region. Integrating high-quality epitaxial Ga2O3 with p-type semiconductor remains an open challenge associated with the integration difficulty on alleviating its defects and dislocations. Herein, we construct an APD consisting of epitaxial & beta;-Ga2O3/La0.8Ca0.2MnO3 heterostructure. The pn junction APDs exhibit a high responsivity of 568 A/W as well as an enhanced avalanche gain of up to 3.0 x 105 at a reverse bias voltage of 37.9 V. The integration capability demonstrated in this work provides exciting opportunities for further development of high-performance Ga2O3-based electronics and optoelectronics.

Automated summary

Ga2O3-based avalanche photodetectors (APDs) have attracted increasing attention for their excellent photoelectric conversion capability in the UV solar-blind region. However, integrating high-quality epitaxial Ga2O3 with p-type semiconductor remains a challenge. In this work, we construct an APD consisting of epitaxial β-Ga2O3/La0.8Ca0.2MnO3 heterostructure. The pn junction APDs exhibit high responsivity and enhanced avalanche gain, demonstrating exciting opportunities for further development of Ga2O3-based electronics and optoelectronics.