Molecular layer deposition of an Al-based hybrid resist for electron-beam and EUV lithography

As lithographic techniques advance in their capabilities of shrinking microelectronics devices, the need for improved resist materials, especially for extreme ultraviolet (EUV), has become increasingly pressing. In this work, we study the molecular layer deposition (MLD) of an Al-based hybrid thin film resist, known as alucone, extending our previous research that tested the Hf-based hybrid thin film hafnicone as an EUV resist. Alucone is grown at 100 degrees C using the metal precursor trimethylaluminum and the organic precursor ethylene glycol. Like hafnicone, alucone behaves as a negative tone resist that can resolve 50-nm line widths, though preliminary data suggest that alucone's line patterns are more sharply defined than those of hafnicone. Whereas hafnicone's sensitivity is 400 mu C/cm(2) using 3 M HCl as the developer, alucone's sensitivity is not yet as good (4800 mu C/cm(2) using 0.125 M HCl). Our study of alucone offers new insight into structural features of an MLD film that can lead to desired EUV-responsive behavior. This insight may accelerate the development of vapor-deposited inorganic resists for use in electron-beam and EUV lithography.

Automated summary

With the advancement of lithographic techniques, the need for improved resist materials for extreme ultraviolet (EUV) has become pressing. This study focuses on the molecular layer deposition (MLD) of an Al-based hybrid resist known as alucone, which can resolve 50-nm line widths. Preliminary data suggest that alucone's line patterns are more defined than those of hafnicone, although its sensitivity is not yet as good.