Sidewall depletion in nano-patterned LAO/STO heterostructures

We have investigated the conductance of nanostructures fabricated from the quasitwo-dimensional electron gas (q2DEG) formed at the LaAlO3/SrTiO3 ( LAO/STO) interface. Measurements were done at room temperature and at T=4.2 K. Our findings show that the fully industry compatible nano- patterning process conserves the conductivity except for a small temperature dependent sidewall depletion which we attribute to etch damage induced by the dry etching process. (c) 2016 Author(s).