4.6 Article

SbSeI and SbSeBr micro-columnar solar cells by a novel high pressure-based synthesis process

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JOURNAL OF MATERIALS CHEMISTRY A
卷 11, 期 33, 页码 17616-17627

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ROYAL SOC CHEMISTRY
DOI: 10.1039/d3ta03179a

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Innovative methodology was used to obtain SbSeI and SbSeBr micro-columnar solar cells for the first time, by selectively halogenating Sb2Se3 thin films at pressures above 1 atm. Increasing the annealing temperature and pressure led to the growth of taller and denser micro-columnar structures, resulting in SbSeI single-crystal columns up to 30 μm with tunable morphology. Solar cell prototypes with substrate configuration exhibited remarkable V-oc values above 550 mV and a bandgap of 1.8 eV.
Van der Waals chalcogenides and chalcohalides have the potential to become the next thin film PV breakthrough, owing to the earth-abundancy and non-toxicity of their components, and their stability, high absorption coefficient and quasi-1D structure, which leads to enhanced electrical anisotropic properties when the material is oriented in a specific crystalline direction. However, quasi-1D semiconductors beyond Sb-2(S,Se)(3), such as SbSeX chalcohalides, have been scarcely investigated for energy generation applications, and rarely synthesised by physical vapor deposition methodologies, despite holding the promise of widening the bandgap range (opening the door to tandem or semi-transparent devices), and showing enticing new properties such as ferroelectric behaviour and defect-tolerant nature. In this work, SbSeI and SbSeBr micro-columnar solar cells have been obtained for the first time by an innovative methodology based on the selective halogenation of Sb2Se3 thin films at pressure above 1 atm. It is shown that by increasing the annealing temperature and pressure, the height and density of the micro-columnar structures grows monotonically, resulting in SbSeI single-crystal columns up to 30 & mu;m, and tuneable morphology. In addition, solar cell prototypes with substrate configuration have shown remarkable V-oc values above 550 mV and 1.8 eV bandgap.

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