A 3050-GHz Ultralow-Power Low-Noise Amplifier With Second-Stage Current-Reuse for Radio Astronomical Receivers in 90-nm CMOS Process

Proceedings Paper Engineering, Electrical & Electronic

An LNA with Input Power Match from 6.1 to 38.6 GHz, the Noise-Figure Minimum of 1.9 dB, and Employing Back Gate for Matching

Mohammad Radpour et al.

Summary: This paper proposes using the back-gate terminal of an FDSOI transistor for input power matching. It is experimentally demonstrated with a 22-nm FDSOI low-noise amplifier (LNA). By applying input to both the front- and back-gate terminals and employing a current-reuse configuration, the LNA is able to increase its gain and lower its input-referred noise.

2022 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) (2022)

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Article Engineering, Electrical & Electronic

A 21-to-41-GHz High-Gain Low Noise Amplifier With Triple-Coupled Technique for Multiband Wireless Applications

Yiming Yu et al.

Summary: This study presents a wideband millimeter-wave low noise amplifier with a triple-coupled technique, utilizing a modified cascode topology and high-order networks to achieve gain enhancement and bandwidth expansion, demonstrating good performance within a single operating bandwidth.

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS (2021)

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Article Engineering, Electrical & Electronic

A Wideband CMOS LNA Using Transformer-Based Input Matching and Pole-Tuning Technique

Hongchen Chen et al.

Summary: The proposed LNA incorporates a wideband low-noise design with a novel input matching network and transformers to reduce noise figure, achieving an NF lower than 4.5 dB over a wide operating bandwidth. Furthermore, utilizing pole-tuning technique and current-reuse technique, the design achieves wider gain bandwidth and low power consumption.

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES (2021)

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Proceedings Paper Engineering, Electrical & Electronic

A 0.6-V VDD, 3.8-dB Minimum Noise Figure, 19.5-62.5-GHz Low Noise Amplifier in 28-nm Bulk CMOS

Chia-Jen Liang et al.

Summary: This paper introduces a millimeter-wave ultra-wideband low-power low noise amplifier that supports the entire 5G FR2 and higher frequency bands. It utilizes auxiliary amplifiers, gain peaking, impedance matching, and a cascode spiral structure to achieve high performance in a 28-nm CMOS technology.

2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) (2021)

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Article Engineering, Electrical & Electronic