GaAs quantum dots under quasiuniaxial stress: Experiment and theory

The optical properties of excitons confined in initially unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasiuniaxial stress. To allow the validation of state-of-the-art computational tools for describing the optical properties of nanostructures, we determine the quantum dot morphology and the in-plane components of externally induced strain tensor at the quantum dot positions. Based on these experimental parameters, we calculate the strain-dependent excitonic emission energy, degree of linear polarization, and fine-structure splitting using a combination of eight-band k & BULL; p formalism with multiparticle corrections using the configuration interaction method. The experimental observations are quantitatively well reproduced by our calculations and deviations are discussed.

Automated summary

The optical properties of excitons in GaAs/AlGaAs quantum dots subjected to variable quasiuniaxial stress were examined. The quantum dot morphology and externally induced strain tensor at the quantum dot positions were determined to validate computational tools for describing nanostructure optical properties. The strain-dependent excitonic emission energy, degree of linear polarization, and fine-structure splitting were calculated using a combination of eight-band k • p formalism with multiparticle corrections using the configuration interaction method. The experimental observations were quantitatively well reproduced by the calculations and deviations were discussed.