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A 100 GBd PAM-4 Combiner and Driver in SiGe BiCMOS

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS (2023)

An Output Bandwidth Optimized 200-Gb/s PAM-4 100-Gb/s NRZ Transmitter With 5-Tap FFE in 28-nm CMOS

Zhongkai Wang et al.

Summary: This article introduces a 200-Gb/s PAM-4 and 100-Gb/s NRZ transmitter in 28-nm CMOS technology. By optimizing output bandwidth and swing, adopting a reconfigurable equalizer and other techniques, the transmitter achieved high-speed data transmission and energy efficiency, demonstrating excellent performance in experiments.

IEEE JOURNAL OF SOLID-STATE CIRCUITS (2022)

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Article Engineering, Electrical & Electronic

A 224-Gb/s DAC-Based PAM-4 Quarter-Rate Transmitter With 8-Tap FFE in 10-nm FinFET

Jihwan Kim et al.

Summary: This article presents the design details of a 224-Gb/s PAM-4 transmitter, including a DAC driver, FFE, and clock distribution network. With quarter-rate clocking and 4:1 serialization architecture, it achieves high energy efficiency and low jitter.

IEEE JOURNAL OF SOLID-STATE CIRCUITS (2022)

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Proceedings Paper Engineering, Electrical & Electronic

PAM-4 Driver Amplifier using Distributed Power Combining

Christian Bohn et al.

Summary: This paper compares two analog driver circuits for optical communication, which achieve low group delay variations and consume less power. Eye diagram measurements demonstrate the potential of the presented amplifier in next generation high data rate communication systems.

2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) (2021)

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Proceedings Paper Engineering, Electrical & Electronic

Ultra Broadband Low-Power 70 GHz Active Balun in 130-nm SiGe BiCMOS

Aniello Franzese et al.

2020 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS) (2020)

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Article Engineering, Electrical & Electronic

Ultra-Wideband Active Balun Topology and Its Implementation on SiGe BiCMOS Across DC-50 GHz

Cuong Huynh et al.

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS (2016)

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A 100 GBd PAM-4 Combiner and Driver in SiGe BiCMOS

相关参考文献

An Output Bandwidth Optimized 200-Gb/s PAM-4 100-Gb/s NRZ Transmitter With 5-Tap FFE in 28-nm CMOS

A 224-Gb/s DAC-Based PAM-4 Quarter-Rate Transmitter With 8-Tap FFE in 10-nm FinFET

PAM-4 Driver Amplifier using Distributed Power Combining

Ultra Broadband Low-Power 70 GHz Active Balun in 130-nm SiGe BiCMOS

Ultra-Wideband Active Balun Topology and Its Implementation on SiGe BiCMOS Across DC-50 GHz

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