4.8 Article

A high linearity and multilevel polymer-based conductive-bridging memristor for artificial synapses

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Multidisciplinary Sciences

Manipulation of current rectification in van der Waals ferroionic CuInP2S6

Xingan Jiang et al.

Summary: This study reports a single-phase self-rectifying memristor based on CuInP2S6, which has continuously tunable current rectifying feature. The material can dynamically control the current flow and device performance by controlling the synergistic effect of Cu+ ions migration and interfacial Schottky barrier, making it a promising candidate for future smart memristors.

NATURE COMMUNICATIONS (2022)

Article Multidisciplinary Sciences

Reliable multilevel memristive neuromorphic devices based on amorphous matrix via quasi-1D filament confinement and buffer layer

Sang Hyun Choi et al.

Summary: Improving the reliability of CBRAM is crucial and this study demonstrates the successful improvement of CBRAM reliability by constructing a nanoporous-defective bottom layer (NP-DBL) structure based on amorphous TiO2.

SCIENCE ADVANCES (2022)

Article Nanoscience & Nanotechnology

Reliable Memristor Based on Ultrathin Native Silicon Oxide

Zelin Ma et al.

Summary: This study reports the use of self-limiting amorphous SiOx as an atomically thin electrolyte for memristors, which exhibits high uniformity and high production yield. Through physical modeling, it is revealed that the atomic thickness of SiOx enables anomalous resistive switching and a transition to an analog quasi-reset mode. The use of Ag-Au nanocomposite electrodes further enhances filament stability. This memristor demonstrates key metrics for analog neural networks and can also be used as an excellent source for generating true random numbers.

ACS APPLIED MATERIALS & INTERFACES (2022)

Article Nanoscience & Nanotechnology

High Performance Full-Inorganic Flexible Memristor with Combined Resistance-Switching

Yuan Zhu et al.

Summary: This study demonstrates a full-inorganic nanoscale flexible memristor with exceptional performance by using free-standing ductile alpha-Ag2S films as both a flexible substrate and a functional electrolyte. The sequential processes of Schottky barrier modification and filament formation are found to be responsible for the outstanding memristor performance.

ACS APPLIED MATERIALS & INTERFACES (2022)

Article Multidisciplinary Sciences

Photo-induced non-volatile VO2 phase transition for neuromorphic ultraviolet sensors

Ge Li et al.

Summary: This study reports a non-volatile multi-level control of vanadium dioxide (VO2) films through oxygen stoichiometry engineering, which can be used for bioinspired neuromorphic vision components. A proof-of-principle neuromorphic ultraviolet sensor with integrated sensing, memory, and processing functions at room temperature is demonstrated, showing its potential application in artificial vision systems.

NATURE COMMUNICATIONS (2022)

Article Nanoscience & Nanotechnology

Analog Synaptic Transistor with Al-Doped HfO2 Ferroelectric Thin Film

Duho Kim et al.

Summary: Neuromorphic computing has attracted attention for overcoming the limitations of von-Neumann computing, with analog synaptic devices playing a crucial role in hardware-based artificial neuromorphic devices. This study demonstrates the synaptic characteristics of a ferroelectric material-based thin-film transistor, showing successful emulation of short-term and long-term plasticity. The research suggests that ferroelectric transistors can serve as alternative artificial synapses with high linearity and pattern recognition accuracy.

ACS APPLIED MATERIALS & INTERFACES (2021)

Article Chemistry, Physical

Stable resistive switching characteristics from highly ordered Cu/TiO2/Ti nanopore array membrane memristors

Dai-Wen Tao et al.

Summary: This study fabricated highly ordered Cu/TiO2/Ti nanopore array membrane memristors using two-step anodization and vacuum evaporation methods, and explored the impact of oxidation parameters on device performance. Results showed that the TiO2 nanopore array structure effectively regulates the distribution of local electric field, improving stability and yield of devices. By adjusting process parameters, dimensions of TiO2 nanopores can be regulated for optimizing device performance.

APPLIED SURFACE SCIENCE (2021)

Article Multidisciplinary Sciences

Mimicking efferent nerves using a graphdiyne-based artificial synapse with multiple ion diffusion dynamics

Huanhuan Wei et al.

Summary: The graphdiyne-based artificial synapse proposed in this study mimics biological signal transmission behavior with high efficiency and stability. It is capable of parallel processing signals, realizing dynamic logic and spatiotemporal rules, and has potential applications in bioinspired peripheral nervous systems, neurorobotics, and brain-computer interfaces.

NATURE COMMUNICATIONS (2021)

Article Multidisciplinary Sciences

In-sensor reservoir computing for language learning via two-dimensional memristors

Linfeng Sun et al.

Summary: This study presents a sensor reservoir computing approach for language learning, utilizing two-dimensional memristors to achieve high dimensionality, nonlinearity, and fading memory. With an accuracy of 91% in classifying short sentences, it offers a low training cost and real-time solution for processing temporal and sequential signals in machine learning applications at the edge.

SCIENCE ADVANCES (2021)

Article Multidisciplinary Sciences

Analog memristive synapse based on topotactic phase transition for high-performance neuromorphic computing and neural network pruning

Xing Mou et al.

Summary: This study presents a topotactic phase transition random-access memory (TPT-RAM) based on SrCoOx, which utilizes oxygen ion migration to achieve reproducible analog switching characteristics and explores its orientation-dependent switching mechanism. Additionally, the memory successfully mimics the selective stabilization of developing synapses, implements neural network pruning, and improves image classification accuracy.

SCIENCE ADVANCES (2021)

Article Chemistry, Multidisciplinary

High photosensitivity light-controlled planar ZnO artificial synapse for neuromorphic computing

Wei Xiao et al.

Summary: A light-controlled artificial synapse based on radiofrequency sputtered ZnO thin film with high photosensitivity has successfully emulated various synaptic functions of the human brain. Furthermore, a three-layer neural network utilizing backpropagation achieved high classification accuracy, while the performance of the device was mainly determined by oxygen vacancy defects and chemisorbed oxygen on the surface of the ZnO film.

NANOSCALE (2021)

Article Nanoscience & Nanotechnology

Electroforming in Metal-Oxide Memristive Synapses

Tao Wang et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

Article Physics, Applied

Stable analog resistance change of a molecular-gap atomic switch over a wide range

Ai Kassai et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2020)

Article Multidisciplinary Sciences

Memristor networks for real-time neural activity analysis

Xiaojian Zhu et al.

NATURE COMMUNICATIONS (2020)

Article Multidisciplinary Sciences

Design of defect-chemical properties and device performance in memristive systems

M. Luebben et al.

SCIENCE ADVANCES (2020)

Article Chemistry, Multidisciplinary

Robust Polyethylenimine Electrolyte for High Performance and Thermally-Stable Atomic Switch Memristors

Dongliang Yang et al.

ADVANCED FUNCTIONAL MATERIALS (2020)

Article Chemistry, Multidisciplinary

Oxide-Based Electrolyte-Gated Transistors for Spatiotemporal Information Processing

Yue Li et al.

ADVANCED MATERIALS (2020)

Article Nanoscience & Nanotechnology

Alloying conducting channels for reliable neuromorphic computing

Hanwool Yeon et al.

NATURE NANOTECHNOLOGY (2020)

Review Chemistry, Multidisciplinary

Conductive-bridging random-access memories for emerging neuromorphic computing

Jun-Hwe Cha et al.

NANOSCALE (2020)

Article Nanoscience & Nanotechnology

Self-Doping Memristors with Equivalently Synaptic Ion Dynamics for Neuromorphic Computing

Yaoyuan Wang et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

Review Multidisciplinary Sciences

Understanding memristive switching via in situ characterization and device modeling

Wen Sun et al.

NATURE COMMUNICATIONS (2019)

Article Nanoscience & Nanotechnology

Quantized Conduction Device with 6-Bit Storage Based on Electrically Controllable Break Junctions

Writam Banerjee et al.

ADVANCED ELECTRONIC MATERIALS (2019)

Review Nanoscience & Nanotechnology

Memristive Synapses and Neurons for Bioinspired Computing

Rui Yang et al.

ADVANCED ELECTRONIC MATERIALS (2019)

Article Nanoscience & Nanotechnology

Current Rectification in a Structure: ReSe2/Au Contacts on Both Sides of ReSe2

Tingting Miao et al.

NANOSCALE RESEARCH LETTERS (2019)

Review Chemistry, Multidisciplinary

Organic Synapses for Neuromorphic Electronics: From Brain-Inspired Computing to Sensorimotor Nervetronics

Yeongjun Lee et al.

ACCOUNTS OF CHEMICAL RESEARCH (2019)

Article Nanoscience & Nanotechnology

Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices

Sven Dirkmann et al.

ACS APPLIED MATERIALS & INTERFACES (2018)

Review Materials Science, Multidisciplinary

From biomaterial-based data storage to bio-inspired artificial synapse

Ziyu Lv et al.

MATERIALS TODAY (2018)

Article Multidisciplinary Sciences

Neuromorphic computing with multi-memristive synapses

Irem Boybat et al.

NATURE COMMUNICATIONS (2018)

Article Chemistry, Multidisciplinary

Synaptic Suppression Triplet-STDP Learning Rule Realized in Second-Order Memristors

Rui Yang et al.

ADVANCED FUNCTIONAL MATERIALS (2018)

Article Chemistry, Multidisciplinary

Li-Ion Synaptic Transistor for Low Power Analog Computing

Elliot J. Fuller et al.

ADVANCED MATERIALS (2017)

Article Chemistry, Physical

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

Zhongrui Wang et al.

NATURE MATERIALS (2017)

Article Chemistry, Multidisciplinary

Mechanism for Conducting Filament Growth in Self-Assembled Polymer Thin Films for Redox-Based Atomic Switches

Karthik Krishnan et al.

ADVANCED MATERIALS (2016)

Article Chemistry, Multidisciplinary

Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices

Hong Wang et al.

ADVANCED FUNCTIONAL MATERIALS (2015)

Article Chemistry, Physical

Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells

Nicolas Onofrio et al.

NATURE MATERIALS (2015)

Review Chemistry, Multidisciplinary

Polymer-Based Resistive Memory Materials and Devices

Wen-Peng Lin et al.

ADVANCED MATERIALS (2014)

Article Multidisciplinary Sciences

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

Yuchao Yang et al.

NATURE COMMUNICATIONS (2014)

Article Engineering, Electrical & Electronic

Metal-Oxide RRAM

H. -S. Philip Wong et al.

PROCEEDINGS OF THE IEEE (2012)

Article Chemistry, Multidisciplinary

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

Sung Hyun Jo et al.

NANO LETTERS (2010)

Review Chemistry, Physical

Nanoionics-based resistive switching memories

RaineR Waser et al.

NATURE MATERIALS (2007)

Article Physics, Applied

Mechanisms for current-induced conductivity changes in a conducting polymer

Xin Xu et al.

APPLIED PHYSICS LETTERS (2006)

Article Multidisciplinary Sciences

Quantized conductance atomic switch

K Terabe et al.

NATURE (2005)