期刊
SCIENTIFIC REPORTS
卷 6, 期 -, 页码 -出版社
NATURE PORTFOLIO
DOI: 10.1038/srep30335
关键词
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资金
- National Natural Science Foundation of China [51472064, 51372056, 11304060, 61308052]
- Science and Technology Innovation Talent Foundation of Harbin [2012RFXXG110]
- Program for Innovation Research of Science in Harbin Institute of Technology (PIRS of HIT A)
- Fundamental Research Funds for the Central University [HIT.BRETIII.201220, HIT.NSRIF.2012045, HIT.ICRST.2010008]
- International Science & Technology Cooperation Program of China [2012DFR50020]
- Program for New Century Excellent Talents in University [NCET-13-0174]
Herein, we demonstrate the contribution of the oxygen-deficiencies on the bipolar resistance switching (RS) properties of amorphous-YFe0.5Cr0.5O3-d (a-YFCO) films. The a-YFCO films were prepared under various oxygen pressures to tune the concentration of oxygen-deficiencies in the films. The XPS data verify that the oxygen-deficiencies increase with decreasing oxygen pressure. The RS property becomes more pronounced with more oxygen-deficiencies in a-YFCO films. Based on the Ohmic conduction measurements in the low resistance state, we confirm that the RS mechanism is related to the migration of oxygen-deficiencies. The enhanced RS and long retention in a-YFCO suggest a great potential for applications in nonvolatile memory devices.
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