期刊
SCIENTIFIC REPORTS
卷 6, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/srep21516
关键词
-
资金
- NSF [EFRI2-DARE-1542879]
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [1363203] Funding Source: National Science Foundation
- Emerging Frontiers & Multidisciplinary Activities
- Directorate For Engineering [1542879] Funding Source: National Science Foundation
In flexible 2D-devices, strain transfer between different van-der Waals stacked layers is expected to play an important role in determining their optoelectronic performances and mechanical stability. Using a 2D non-linear shear-lag model, we demonstrate that only 1-2% strain can be transferred between adjacent layers of different 2d-materials, depending on the strength of the interlayer vdW interaction and the elastic modulus of the individual layers. Beyond this critical strain, layers begin to slip with respect to each other. We further show that due to the symmetry of the periodic interlayer shear potential, stacked structures form strain solitons with alternating AB/BA or AB/AB stacking which are separated by incommensurate domain walls. The extent and the separation distance of these commensurate domains are found to be determined by the degree of the applied strain, and their magnitudes are calculated for several 2D heterostructures and bilayers including MoS2/WS2, MoSe2/WSe2, Graphene/Graphene and MoS2/MoS2 using a multiscale method. As bilayer structures have been shown to exhibit stacking-dependent electronic bandgap and quantum transport properties, the predictions of our study will not only be crucial in determining the mechanical stability of flexible 2D devices but will also help to better understand optoelectronic response of flexible devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据