期刊
RSC ADVANCES
卷 6, 期 90, 页码 87416-87421出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ra18238k
关键词
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资金
- Major State Basic Research Development Program [2014CB921600]
- Natural Science Foundation of China [11374320, 11322441, 61574152]
- CAS Interdisciplinary Innovation Team
- Fund of Shanghai Science and Technology Foundation [14JC1406400]
- Ten Thousand Talents Program for Young Talents
Two dimensional material based photodetectors have attracted wide attention in recent years. In this work, a few-layer MoTe2 based phototransistor with a ferroelectric polymer P(VDF-TrFE) topgate is fabricated. The remanent polarization of the ferroelectrics could deplete the channel effectively to decrease the dark current of the device by more than one magnitude. As a result, the MoTe2 phototransistor has an appreciable photoresponse for visible light and near infrared. The device has a broad photoresponse range (0.6-1.5 mu m), the responsivity and detectivity reach 16.4 mA W-1 and 1.94 x 10(8) Jones for 1060 nm light. The device works without an external gate voltage, which makes for higher reliability and lower power dissipation for practical application.
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