CVD-growth and optoelectronic characterization of 2D MoS2/ReS2 vertical heterostructures with reverse stacking sequence

Vertically stacked 2D heterostructures (HSs) created via in-plane isotropic/anisotropic 2D transition-metal dichalcogenides (TMDCs) have recently attracted wide attention owing to unique interlayer coupling characteristics and possess a perspective potential in advanced photodetectors. However, the fabrication and interlayer exciton behavior of such vertical HS remain an enormous challenge. Herein, we report on the demonstration of two kinds of 2D MoS2/ReS2-based vertical HSs by altering the Re-based precursors during the one-step CVD process. The related interlayer excitons, interlayer coupling interaction, and charge separation are elucidated by Raman-photoluminescence spectroscopy and photoresponse measurement. Lastly, the possible growth mechanism of these two types of vertical HSs has been discussed on the basis of the evaporation temperature difference between Re-based precursors and Mo foil. Such a study provides a feasible and controllable strategy for the fabrication of in-plane isotropic/ anisotropic TMDC HSs with different phase structures.

Automated summary

In this study, two types of 2D MoS2/ReS2-based vertical heterostructures (HSs) were successfully fabricated by altering the Re-based precursors during a one-step chemical vapor deposition process. The interlayer excitons, interlayer coupling interaction, and charge separation were investigated through Raman-photoluminescence spectroscopy and photoresponse measurement. The possible growth mechanism of these two types of vertical HSs was discussed based on the evaporation temperature difference between the Re-based precursors and Mo foil. This study provides a feasible and controllable strategy for fabricating in-plane isotropic/anisotropic TMDC HSs with different phase structures.