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Article
Nanoscience & Nanotechnology
Cecile X. Yu et al.
Summary: Strong intrinsic spin-orbit interaction in silicon enables strong spin-photon coupling with a frequency of 300 MHz, which is promising for scalable quantum information processing. Coupling semiconductor quantum dots to superconducting microwave resonators allows for fast non-demolition readout and on-chip connectivity. By leveraging the strong spin-orbit interaction in silicon, a spin-photon coupling rate of 330 MHz is achieved, surpassing the spin-photon decoherence rate and paving the way for circuit quantum electrodynamics with spins in semiconductor quantum dots.
NATURE NANOTECHNOLOGY
(2023)
Article
Materials Science, Multidisciplinary
V. P. Michal et al.
Summary: We study a spin circuit-QED device, where a superconducting microwave resonator is connected to a single hole confined in a semiconductor quantum dot via capacitance. The gyromagnetic g matrix of the hole can be electrically modulated due to the strong spin-orbit coupling inherent in valence-band states. This modulation allows for coupling between the photons in the resonator and the hole spin. We demonstrate that the spin-photon interaction can be controlled through gate voltages and magnetic field orientation, and the character of the interaction can switch from fully transverse to fully longitudinal.
Article
Materials Science, Multidisciplinary
Sina Gholizadeh et al.
Summary: We have discovered a large nonlinear Hall effect in zincblende nanostructures, driven by the quadrupole interaction of the electric field with spin-3/2 heavy holes, which was previously considered negligible. This interaction is enabled by Td symmetry, indicating the breaking of inversion symmetry and resulting in an electric-field correction to the in-plane g factor in two dimensions. This effect can be observed in state-of-the-art heterostructures, either through magnetic doping or using a vector magnet, and its magnitude is comparable to that of topological materials even with small perpendicular magnetic fields.
Article
Materials Science, Multidisciplinary
Melina Luethi et al.
Summary: Planar Josephson junctions made of semiconductors with strong spin-orbit interaction (SOI) offer a promising platform for hosting Majorana bound states (MBSs). Previous studies focused on electron gases with linear momentum-dependent SOI, whereas a two-dimensional hole gas in planar germanium (Ge) exhibits cubic momentum-dependent SOI. However, we demonstrate that due to its particularly large SOI, Ge is a favorable material for MBS emergence. Using a discretized model, we numerically simulate a Ge planar Josephson junction and find that even cubic SOI can lead to the formation of MBSs. Interestingly, we observe an asymmetric phase diagram in the presence of cubic SOI. Furthermore, trivial Andreev bound states can mimic the signatures of MBSs in a Ge planar Josephson junction, posing challenges for experimental detection.
Article
Multidisciplinary Sciences
Ke Wang et al.
Summary: Hole-spin qubits in germanium show promise for rapid, all-electrical qubit control. The authors demonstrate ultrafast single-spin manipulation in a hole-based double quantum dot in a germanium hut wire, with a record Rabi frequency exceeding 540 MHz. These results suggest the potential for ultrafast coherent control of hole spin qubits to meet the requirements for scalable quantum information processing.
NATURE COMMUNICATIONS
(2022)
Article
Physics, Applied
M. Lodari et al.
Summary: A lightly strained germanium channel supports a high-mobility two-dimensional hole gas with low percolation density. This low-disorder system exhibits tunable fractional quantum Hall effects at low densities and low magnetic fields, making it a promising platform for fast and coherent quantum hardware.
APPLIED PHYSICS LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Henry F. Legg et al.
Summary: In this study, a giant magnetochiral anisotropy effect was discovered, which can achieve highly controllable rectification by breaking the inversion symmetry of materials, providing new possibilities for the development of wireless technology.
NATURE NANOTECHNOLOGY
(2022)
Article
Physics, Multidisciplinary
Daniel Jirovec et al.
Summary: In this study, we investigate the effect of the cubic Rashba spin-orbit interaction on the mixing of spin states in a planar Ge hole double quantum dot. Our results show that the spin-flip term induced by the spin-orbit interaction has a significant impact on the spin state mixing. This finding is important for optimizing future qubit experiments.
PHYSICAL REVIEW LETTERS
(2022)
Article
Physics, Multidisciplinary
Yongjian Wang et al.
Summary: Researchers have discovered that ZrTe5 crystals exhibit a gigantic magnetochiral anisotropy when they are in proximity to a topological quantum phase transition, which is the largest ever observed. The low carrier density, inhomogeneities, and torus-shaped Fermi surface induced by breaking of inversion symmetry in a Dirac material are argued to be central to explaining this extraordinary property.
PHYSICAL REVIEW LETTERS
(2022)
Article
Multidisciplinary Sciences
Pawel Matus et al.
Summary: This study investigates the propagation of an oscillatory electromagnetic field inside a Weyl semimetal. The presence of chiral anomalies intrinsic to massless Weyl particles leads to a previously overlooked nonlocal regime that separates normal and viscous skin effects. The researchers propose using this regime as a diagnostic tool for the presence of chiral anomalies in optical conductivity measurements.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
(2022)
Article
Physics, Multidisciplinary
Patrick Harvey-Collard et al.
Summary: This study reports the coherent coupling of two electron spins using virtual microwave photons in a silicon double quantum dot. It demonstrates the achievement of the strong dispersive regime of circuit quantum electrodynamics in spin-spin coupling, which is essential for long-range two-qubit gates and scalable networks of spin qubits on a chip.
Article
Multidisciplinary Sciences
Adam R. Mills et al.
Summary: Silicon spin qubits have the potential to become the dominant technology in the development of intermediate-scale quantum processors. However, there are still shortcomings in achieving high-fidelity state preparation and readout, as well as single- and two-qubit gate operations.
Article
Engineering, Electrical & Electronic
Leon C. Camenzind et al.
Summary: The greatest challenge in quantum computing is achieving scalability. However, silicon fin field-effect transistors can host spin qubits operating above 4 K, potentially enabling the scaling and development of quantum computing systems.
NATURE ELECTRONICS
(2022)
Article
Physics, Multidisciplinary
Stefano Bosco et al.
Summary: Spin qubits in silicon and germanium quantum dots are promising platforms for quantum computing. However, there is a critical challenge of entangling spin qubits over micrometer distances. Current research focuses on maximizing interactions between qubits and microwave resonators, but this leads to unavoidable residual qubit-qubit couplings. Interestingly, these residual couplings can be eliminated by introducing longitudinal spin-photon interactions in hole spin qubits.
PHYSICAL REVIEW LETTERS
(2022)
Article
Multidisciplinary Sciences
Stephan G. J. Philips et al.
Summary: Future quantum computers require a large number of reliable qubits, but this is typically conflicting with high fidelity operations. In this study, a six-qubit processor was designed and operated with high fidelities for universal operation, state preparation, and measurement, using careful Hamiltonian engineering and efficient calibration. These advances are a major stepping stone towards large-scale quantum computers.
Article
Nanoscience & Nanotechnology
N. Piot et al.
Summary: This article reports a spin-orbit hole spin qubit, which achieves operation sweet spots by varying the magnetic field direction, reducing charge noise and extending Hahn-echo coherence time, providing new possibilities for the scalability of silicon-based hole spin qubits in quantum information processing.
NATURE NANOTECHNOLOGY
(2022)
Article
Physics, Multidisciplinary
Bence Hetenyi et al.
Summary: An anomalous energy splitting of spin triplet states at zero magnetic field has been measured in germanium quantum dots, which could significantly affect the coupling between tunnel-coupled quantum dots and have profound implications for semiconducting quantum computers. Researchers have developed an analytical model linking the zero-field splitting to the cubic Rashba spin-orbit interaction, which naturally occurs in hole nanostructures and can be tuned by external electric fields. Numerical simulations confirm the validity of the analytical theory.
PHYSICAL REVIEW LETTERS
(2022)
Article
Physics, Applied
Stefano Bosco et al.
Physical Review Applied
(2022)
Article
Materials Science, Multidisciplinary
Yang Wang et al.
Summary: In addition to the topologically protected linear dispersion, a tunable Rashba spin-splitting two-dimensional electron gas was found on the surface of topological insulators. Large bilinear magnetoresistance was observed in Bi2Se3 films decorated with transition-metal atoms, and this effect can be fine tuned through surface atom deposition for potential spintronic applications.
Article
Materials Science, Multidisciplinary
Christoph Adelsberger et al.
Summary: This paper analyzes the dependence of spin-orbit interaction (SOI) and g factors on orbital magnetic field in hole semiconductor nanowires (NW). It finds that magnetic fields aligned along the axis of the NW result in a renormalization of the effective g factor up to 400%, even at small values of magnetic field. The paper provides an exact analytical solution for holes in Ge NWs and derives an effective low-energy model to investigate the effect of electric fields applied perpendicular to the NW. The role of strain, growth direction, and high-energy valence bands in different architectures is also discussed in detail.
Article
Materials Science, Multidisciplinary
Kohei Kawabata et al.
Summary: The Landauer formula has been extended to the nonlinear-response regime, revealing that the nonlinear conductance is given by derivatives with respect to energy. This sensitivity to energy derivatives produces unique nonlinear transport phenomena in mesoscopic systems, such as disordered and topological materials. The study also explores the nonlinear conductance of disordered chains and the critical behavior of nonlinear response near mobility edges, as well as the nonlinear response of graphene and the scattering theory of the nonlinear Hall effect.
Article
Materials Science, Multidisciplinary
Yang Wang et al.
Summary: The observation of nonlinear planar Hall effect (NPHE) in Bi2Se3 films grown on magnetic insulator (MI) substrates is reported. It is found that the magnitude of NPHE is inversely proportional to carrier density, possibly due to the MPE-induced exchange gap opening and out-of-plane spin textures in the topological insulator (TI) surface states.
Article
Materials Science, Multidisciplinary
Henry F. Legg et al.
Summary: This paper investigates the superconducting diode effect caused by the magnetic field and proximity effect, and explores its applications in detecting inversion symmetry breaking and topological superconductivity phase transition.
Article
Materials Science, Multidisciplinary
Semyon Germanskiy et al.
Summary: We report on efficient control of third-harmonic yield and polarization state in electron-doped Cd3As2 thin films at room temperature by manipulating the driving-pulse ellipticity. This tunability is understood as a result of terahertz-field-driven intraband kinetics of massless Dirac fermions. Our study opens up possibilities for utilizing the nonlinear optical properties of Dirac matter in signal processing and optical communications.
Article
Materials Science, Multidisciplinary
Christoph Adelsberger et al.
Summary: Hole-spin qubits in quasi-one-dimensional structures in Ge semiconductors are investigated for their potential in quantum information processing. The study focuses on optimizing the strong spin-orbit interaction (SOI) and explores the effects of electric and magnetic fields on one-dimensional hole systems. The results show that orbital effects significantly renormalize the g factor and there exists a sweet spot in the nanowire structure where charge noise is strongly suppressed, leading to highly coherent qubits with large Rabi frequencies.
Article
Materials Science, Multidisciplinary
Shibalik Lahiri et al.
Summary: We investigate the effect of band geometric quantities on nonlinear magnetoresistivity in two-dimensional systems in the presence of a perpendicular magnetic field. The interplay of the Berry curvature, the orbital magnetic moment, and the Lorentz force can induce a finite nonlinear resistivity, which scales linearly with the magnetic field and is purely quantum mechanical in origin. Our proposed transport signature can serve as an additional experimental probe for the geometric quantities in intrinsically time reversal symmetric systems.
Article
Nanoscience & Nanotechnology
Florian N. M. Froning et al.
Summary: Quantum computers promise to execute complex tasks exponentially faster than classical computers, but require fast and selective control of individual qubits while maintaining coherence. Operating a hole spin qubit in a Ge/Si nanowire all-electrically demonstrates the principle of switching between fast control and increased coherence.
NATURE NANOTECHNOLOGY
(2021)
Review
Nanoscience & Nanotechnology
Giordano Scappucci et al.
Summary: This review explores the advancements in utilizing germanium as a versatile material for building quantum components to enable scalable quantum information processing, focusing on key building blocks such as hole-spin qubits and superconductor-semiconductor hybrids.
NATURE REVIEWS MATERIALS
(2021)
Article
Physics, Multidisciplinary
Stefano Bosco et al.
Summary: Hole spin qubits exhibit tunable interactions with nuclear defects that can be controlled and suppressed to reduce noise. Simple device designs can ensure qubits are highly coherent and minimally affected by charge and hyperfine noise. The large spin-orbit interaction in elongated quantum dots speeds up qubit operations and alters noise dynamics, enhancing the fidelity of qubit gates.
PHYSICAL REVIEW LETTERS
(2021)
Article
Physics, Applied
L. Bellentani et al.
Summary: Hole spins in semiconductor quantum dots provide a potential route for electrically controlled qubits, with Si p-MOSFETs showing great potential for integration and scalability. Simulations of a hole-spin qubit in a downscaled Si-channel p-MOSFET demonstrate the formation of well-defined hole quantum dots and the possibility of electrical control.
PHYSICAL REVIEW APPLIED
(2021)
Review
Engineering, Electrical & Electronic
M. F. Gonzalez-Zalba et al.
Summary: This article discusses the scaling prospects of quantum computing systems based on silicon spin technology and how different layers of such a computer could benefit from using complementary metal-oxide-semiconductor (CMOS) technology. The potential of leveraging CMOS expertise in addressing the scaling challenges at a system level is highlighted.
NATURE ELECTRONICS
(2021)
Article
Multidisciplinary Sciences
Nico W. Hendrickx et al.
Summary: Research on building quantum circuits using advanced semiconductor manufacturing techniques has led to the demonstration of a four-qubit quantum processor based on hole spins in germanium quantum dots. All-electric qubit logic allows for freely programmable operations on multiple qubits, resulting in a compact and highly connected circuit. The results are a step towards quantum error correction and quantum simulation using quantum dots.
Article
Multidisciplinary Sciences
Xiao Xue et al.
Summary: This study presents a cryogenic CMOS control chip operating at 3 K for coherent control and simple algorithms on silicon qubits operating at 20 mK. The chip shows high fidelity performances in qubit operations and can achieve the same fidelity as commercial instruments at room temperature, demonstrating potential for fully integrated, scalable silicon-based quantum computers.
Review
Physics, Multidisciplinary
B. Q. Lv et al.
Summary: Topological semimetals are characterized by bulk band crossings, which have led to increased research activities in the field due to precise theoretical predictions, well-controlled material synthesis, and advanced characterization techniques. The distinct features of these materials include dimensionality, degeneracy, slope and order of band dispersion, topological invariants, and crystallographic symmetries that stabilize band crossings. Additionally, the unique properties of various topological semimetal phases, such as nontrivial surface states and transport responses, have been reviewed.
REVIEWS OF MODERN PHYSICS
(2021)
Article
Quantum Science & Technology
Zhanning Wang et al.
Summary: Hole quantum dots play a central role in electrical spin qubit manipulation, exhibiting optimal operation points for fast and long-lived performance. The unique properties of group IV crystals make hole spin qubits ideal for scalable quantum computing with ultra-fast operation and high coherence.
NPJ QUANTUM INFORMATION
(2021)
Article
Physics, Applied
Katharina Laubscher et al.
Summary: This tutorial provides a pedagogical introduction to Majorana bound states in semiconducting nanostructures, focusing on models like Rashba nanowires and proximitized edge states of 2D topological insulators. It is aimed at graduate students, both theorists and experimentalists, seeking to familiarize themselves with basic concepts in the field.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Chemistry, Physical
Daniel Jirovec et al.
Summary: Ge quantum well hole singlet-triplet spin qubits demonstrate adjustable frequencies and extended coherence times, competing with state-of-the-art spin qubits. Operable at low magnetic fields of a few millitesla, they show potential for on-chip integration with superconducting technologies.
Article
Physics, Multidisciplinary
James H. Cullen et al.
Summary: The study reveals a novel Hall effect linear in an applied in-plane magnetic field, termed as the anomalous planar Hall effect (APHE) caused by the Berry curvature monopole of nonmagnetic two-dimensional spin-3=2 holes. In this effect, all spin-dependent disorder contributions vanish to leading order, with no ordinary Hall effect. This phenomenon provides a direct transport probe of the Berry curvature accessible in all p-type semiconductors.
PHYSICAL REVIEW LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Stefano Bosco et al.
Summary: The study proposes a minimal design modification of planar devices to enhance interactions for low-power ultrafast quantum operations. By establishing an asymmetric potential that strongly compresses the quantum dot, the confinement-induced spin-orbit interaction can be turned on and off at will in state-of-the-art qubits.
Article
Materials Science, Multidisciplinary
Renato M. A. Dantas et al.
Summary: This study nonperturbatively investigates the anomalous Hall current and high harmonics generated by strong elliptically polarized laser fields in Weyl and Dirac semimetals. The crossover between perturbative and nonperturbative regimes is characterized by the electric field strength epsilon* = mu omega/2evF. In the perturbative regime, the anomalous Hall current depends quadratically on the field strength, while in the nonperturbative regime, it saturates and decays as (ln epsilon)/epsilon. Additionally, even-order high harmonics are generated in the nonperturbative regime when in-plane rotational symmetry is broken.
Article
Quantum Science & Technology
Stefano Bosco et al.
Summary: Hole Si fin field-effect transistors (FinFETs) are shown to be highly compatible with modern CMOS technology and have operational sweet spots where charge noise is completely removed. The presence of these sweet spots is a result of the interplay between material anisotropy and the shape of the FinFET cross section. Designs that maximize qubit performance and potentially pave the way towards a scalable spin-based quantum computer are identified.
Article
Materials Science, Multidisciplinary
L. A. Terrazos et al.
Summary: Holes in a SixGe1-x/Ge/SixGe1-x quantum well exhibit advantageous properties in a perpendicular magnetic field as qubits, including large intrinsic splitting, light effective mass, and larger dot sizes. Compared to electrons, hole qubits are not affected by nearby quantum levels and can potentially implement electric-dipole spin resonance.
Article
Materials Science, Multidisciplinary
Jia-Xin Xiong et al.
Summary: Contrary to conventional wisdom, a strong and tunable k-linear Rashba SOC has been discovered in Ge/Si semiconductor quantum wells, originating from a combination of heavy-hole-light-hole mixing and direct dipolar coupling to the external electric field. Ge/Si QWs oriented in the [110] direction exhibit a much stronger linear Rashba SOC compared to their [001] counterparts, making them an excellent platform for large-scale quantum computation.
Article
Physics, Multidisciplinary
F. N. M. Froning et al.
Summary: By experimentally measuring the strength of spin-orbit interaction of hole spins in Ge/Si nanowires, a short spin-orbit length and significant orbital effects of the applied magnetic field on hole states were observed. Additionally, the strong spin-orbit interaction demonstrated caused a significant enhancement of the g factor with the magnetic field.
PHYSICAL REVIEW RESEARCH
(2021)
Article
Physics, Multidisciplinary
Philipp M. Mutter et al.
Summary: The study demonstrates that in heavy-hole systems in germanium, utilizing sizable cubic Rashba spin-orbit interaction can result in highly tunable spin coupling strengths, enabling fast qubit gate operations.
PHYSICAL REVIEW RESEARCH
(2021)
Article
Materials Science, Multidisciplinary
Vincent P. Michal et al.
Summary: The article discusses methods and techniques for realizing qubits by confining holes in semiconductor nanostructures. It is found that fast all-electrical manipulation can be achieved by introducing spin-orbit coupling. Spin-orbit coupling can be implemented through static electric bias and ac electrical driving.
Article
Chemistry, Multidisciplinary
Fei Gao et al.
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(2020)
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J. Yoneda et al.
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(2020)
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Sergey Kovalev et al.
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PHYSICAL REVIEW LETTERS
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PHYSICAL REVIEW LETTERS
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Hannes Watzinger et al.
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NATURE COMMUNICATIONS
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Quantum Science & Technology
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NPJ QUANTUM INFORMATION
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(2007)
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