期刊
RSC ADVANCES
卷 6, 期 65, 页码 60271-60276出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ra12812b
关键词
-
资金
- National Natural Science Foundation of China [51172067]
- Hunan Provincial Natural Science Fund for Distinguished Young Scholars [13JJ1013]
- Specialized Research Fund for the Doctoral Program of Higher Education [20130161110036]
- New Century Excellent Talents in University [NCET-12-0171.]
The electronic properties of an MoS2 and graphene heterostructure are investigated by density functional calculations. Our results show that both the intrinsic properties of MoS2 and graphene at the equilibrium interfacial distance are preserved in the weak van der Waals contact. Furthermore, Schottky doping for the MoS2 and graphene contact can be tuned by the interfacial distance. Our calculations show that the Schottky doping can be transformed from an n-type Schottky contact to a p-type Schottky contact when the interfacial distance decreased. We find that interfacial charge transfer and the Fermi level shift determines the Schottky barrier transition from an n-type Schottky contact to a p-type Schottky contact. Our studies may prove to be instrumental in the future design and fabrication of van der Waals based field effect transistors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据