Monolayer MoS2 as a sensitive probe: Exploring the resistive switching mechanism of MoS2/NSTO heterostructures

Revealing the mechanism of the interface-type resistive switching remains challenging due to the difficulties in direct observation of the buried interface. As a transparent conductive electrode, monolayer MoS2 is suitable for studying resistance switching mechanisms directly at the interface due to its atomic-sized thickness and electron transfer sensitivity. In this study, a memory device based on the MoS2/Nb:SrTiO3 heterojunction was constructed. An apparent hysteresis loop can be observed, along with resistive switching phenomenon between high resistance state and low resistance state. In addition, the surface potential of MoS2 also varies significantly as the resistance state changes. Furthermore, the evolution of PL spectrum in MoS2 under electric fields presents a shift with the resistance state. Finally, using the sensitive response of the MoS2 monolayer, interface charge trapping/ detrapping mechanism in MoS2/Nb:SrTiO3 heterojunction was confirmed.

Automated summary

Revealing the mechanism of interface-type resistive switching is challenging and requires direct observation of the buried interface. Using a memory device based on the MoS2/Nb:SrTiO3 heterojunction, this study investigated the resistive switching mechanism. The results showed an apparent hysteresis loop and resistive switching phenomenon between high and low resistance states. The surface potential of MoS2 and its PL spectrum also varied with the resistance state, confirming the interface charge trapping/ detrapping mechanism.