☆ 4.6 Article

Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell

MOLECULES (2023)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Biochemistry & Molecular Biology

A Facile Hydrothermal Synthesis and Resistive Switching Behavior of α-Fe2O3 Nanowire Arrays

Zhiqiang Yu et al.

Summary: A simple hydrothermal process was used to synthesize α-Fe2O3 nanowire arrays with preferential growth orientation along the [110] direction. A W/a-Fe2O3/FTO memory device with nonvolatile resistive switching behavior was achieved. The device showed a resistance ratio (R-HRS/R-LRS) exceeding two orders of magnitude and preserved this ratio for more than 10(3)s without obvious decline. The carrier transport properties of the device were dominated by Ohmic conduction mechanism in the low resistance state and trap-controlled space-charge-limited current conduction mechanism in the high resistance state. The nonvolatile resistive switching behavior was suggested to be due to the formation and rupture of conducting nanofilaments modified by intrinsic oxygen vacancies. The α-Fe2O3 nanowire-based W/a-Fe2O3/FTO memory device has potential applications in next-generation nonvolatile memory devices.

MOLECULES (2023)

添加到收藏夹

Article Chemistry, Analytical

The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO2/FTO Memory Device

Zhiqiang Yu et al.

Summary: This paper analyzes the effect of nitrogen annealing on the resistive switching characteristics of the rutile TiO2 nanowire-based W/TiO2/FTO memory device. The W/TiO2/FTO memory device exhibits a nonvolatile bipolar resistive switching behavior with a high resistance ratio (R-HRS/R-LRS) of about two orders of magnitude. The conduction behaviors of the W/TiO2/FTO memory device are attributed to the Ohmic conduction mechanism and the Schottky emission in the low resistance state and the high resistance state, respectively. Furthermore, the R-HRS/R-LRS of the W/TiO2/FTO memory device is obviously increased from about two orders of magnitude to three orders of magnitude after the rapid nitrogen annealing treatment. In addition, the change in the W/TiO2 Schottky barrier depletion layer thickness and barrier height modified by the oxygen vacancies at the W/TiO2 interface is suggested to be responsible for the resistive switching characteristics of the W/TiO2/FTO memory device. This work demonstrates the potential applications of the rutile TiO2 nanowire-based W/TiO2/FTO memory device for high-density data storage in nonvolatile memory devices.

SENSORS (2023)

添加到收藏夹

Article Chemistry, Multidisciplinary

Sodium-Doped Titania Self-Rectifying Memristors for Crossbar Array Neuromorphic Architectures

Sung-Eun Kim et al.

Summary: This study demonstrates high-reliability Na-doped TiO2 memristors grown in situ by ALD, showing electroforming-free and self-rectifying resistive-switching behavior, ideal for selectorless crossbar arrays. Effective addressing of selectorless nodes with negligible sneak current is achieved via electrical measurement, resulting in greater than 99.1% accuracy for image-recognition tasks.

ADVANCED MATERIALS (2022)

添加到收藏夹

Article Materials Science, Ceramics

Resistive switching properties and photoabsorption behavior of Ti ion implanted ZnO thin films

Ashis K. Manna et al.

Summary: We present the photoabsorption response and resistive switching behavior of ion-implanted ZnO thin films. The role of oxygen vacancies in the evolution of these properties is studied using various techniques. The results suggest an improvement in the crystallinity of the films with ion fluence, and an enhancement in oxygen vacancy is responsible for higher photo response in the UV-Vis range. Engineering of bandgap also introduces enhanced absorption in visible regime. An asymmetric resistive switching behavior is observed in films implanted at the highest fluence, with a switching behavior from a high resistance state to a low resistance state under positive bias conditions and a rectifying nature under negative bias conditions. Oxygen vacancies play a crucial role in the modulation of photoabsorption response and resistive switching mechanism.

CERAMICS INTERNATIONAL (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor

Tangyou Sun et al.

Summary: In this study, the interaction between polyvinyl alcohol (PVA) and two-dimensional material molybdenum disulfide (MoS2) with different mixing ratios was investigated. The optimal ratio of PVA:MoS2 was determined to be 4:1, presenting excellent resistive switching behavior. Additionally, the resistive switching performance was greatly improved by inserting a protective layer of ZnO between the electrode and the composite film. The proposed nanostructured Ag/ZnO/PVA:MoS2/ITO device shows great potential for nonvolatile multilevel data storage memory.

NANOMATERIALS (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

Resistive switching of self-assembly stacked h-BN polycrystal film

Tangyou Sun et al.

Summary: The study proposes a liquid-phase self-assembly (LPSA) method to fabricate stacked hexagonal boron nitride (h-BN) polycrystal film and demonstrates its resistive switching behavior. Resistive switching behaviors are observed in devices with different electrode structures, and the proposed method offers a convenient and low-cost way to fabricate memory materials on arbitrary substrates. Stacked polycrystal film facilitates the study of nonvolatile resistive switching and opens up potential avenues for numerous functional applications.

CELL REPORTS PHYSICAL SCIENCE (2022)

添加到收藏夹

Article Chemistry, Physical

Self-rectifying and forming-free nonvolatile memory behavior in single-crystal TiO2 nanowire memory device

Zhiqiang Yu et al.

Summary: This study successfully synthesized vertically aligned single-crystal TiO2 nanowire with preferred orientation, and achieved stable self-rectifying and forming-free nonvolatile memory behavior with high resistance ratio in the TiO2 nanowire memory device. The memory behavior was attributed to different conduction mechanisms and the metallic conductive filament model adjusted by oxygen vacancies.

JOURNAL OF ALLOYS AND COMPOUNDS (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

Mahmoud N. Almadhoun et al.

Summary: The study demonstrates memristive behavior in Ga/GaOx/SiOx/p(+)-Si junctions, with a reversible insulator-metal transition and high ON/OFF ratio. The presence of a nanoscale gallium oxide layer plays a critical role in achieving reversible resistive switching.

NANO LETTERS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Highly bendable asymmetric resistive switching memory based on zinc oxide and magnetic iron oxide heterojunction

Muhammad Umair Khan et al.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2020)

添加到收藏夹

Article Physics, Applied

Threshold switching of non-stoichiometric CuO nanowire for selector application

Chi-Hsin Huang et al.

APPLIED PHYSICS LETTERS (2020)

添加到收藏夹

Article Chemistry, Physical

Introducing a thin MnO2 layer in Co3O4-based memory to enhance resistive switching and magnetization modulation behaviors

Chuangye Yao et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2020)

添加到收藏夹

Article Nanoscience & Nanotechnology

Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires

Karl-Magnus Persson et al.

ADVANCED ELECTRONIC MATERIALS (2020)

添加到收藏夹

Article Nanoscience & Nanotechnology

TEM Nanostructural Investigation of Ag-Conductive Filaments in Polycrystalline ZnO-Based Resistive Switching Devices

Katarzyna Bejtka et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

添加到收藏夹

Article Materials Science, Multidisciplinary

Wafer-scale high anti-reflective nano/micro hybrid interface structures via aluminum grain dependent self-organization

Tangyou Sun et al.

MATERIALS & DESIGN (2020)

添加到收藏夹

Article Astronomy & Astrophysics

Endurance degradation of solution-processed ZnO polycrystalline film-based resistive switching memory

Wang JianBo et al.

SCIENTIA SINICA-PHYSICA MECHANICA & ASTRONOMICA (2020)

添加到收藏夹

Article Chemistry, Physical

Self-rectifying and interface-controlled resistive switching characteristics of molybdenum oxide

Chih-Chieh Hsu et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2019)

添加到收藏夹

Article Physics, Applied

Rate limited filament formation in Al-ZnO-Al bipolar ReRAM cells and its impact on early current window closure during cycling

Amit Kumar Singh Chauhan et al.

JOURNAL OF APPLIED PHYSICS (2019)

添加到收藏夹

Article Physics, Applied

Modulating metallic conductive filaments via bilayer oxides in resistive switching memory

Y. M. Sun et al.

APPLIED PHYSICS LETTERS (2019)

添加到收藏夹

Article Electrochemistry

Core-shell copper nanowire-TiO2 nanotube arrays with excellent bipolar resistive switching properties

Jun Chen et al.

ELECTROCHIMICA ACTA (2019)

添加到收藏夹

Article Chemistry, Physical

High-efficiency magnetic modulation in Ti/ZnO/Pt resistive random-access memory devices using amorphous zinc oxide film

Shuxia Ren et al.

APPLIED SURFACE SCIENCE (2019)

添加到收藏夹

Article Chemistry, Physical

Morphology-dependent high antireflective surfaces via anodic aluminum oxide nanostructures

Haiou Li et al.

APPLIED SURFACE SCIENCE (2019)

添加到收藏夹

Article Materials Science, Multidisciplinary

Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive device

Andrey Sergeevich Sokolov et al.

NPG ASIA MATERIALS (2019)

添加到收藏夹

Article Materials Science, Multidisciplinary

Solution-processable zinc oxide nanorods and a reduced graphene oxide hybrid nanostructure for highly flexible and stable memristor

Zhe Zhou et al.

JOURNAL OF MATERIALS CHEMISTRY C (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

Neutral Oxygen Beam Treated ZnO-Based Resistive Switching Memory Device

Firman Mangasa Simanjuntak et al.

ACS APPLIED ELECTRONIC MATERIALS (2019)

添加到收藏夹

Article Chemistry, Physical

Unravelling Resistive Switching Mechanism in ZnO NW Arrays: The Role of the Polycrystalline Base Layer

Gianluca Milano et al.

JOURNAL OF PHYSICAL CHEMISTRY C (2018)

添加到收藏夹

Article Chemistry, Multidisciplinary

Multistate resistive switching characteristics of ZnO nanoparticles embedded polyvinylphenol device

Jihee Jung et al.

JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY (2018)

添加到收藏夹

Article Physics, Multidisciplinary

High uniformity and forming-free ZnO-based transparent RRAM with HfOx inserting layer

Shi-Jian Wu et al.

CHINESE PHYSICS B (2018)

添加到收藏夹

Article Physics, Applied

Intensity-modulated LED achieved through integrating p-GaN/n-ZnO heterojunction with multilevel RRAM

Meng Qi et al.

APPLIED PHYSICS LETTERS (2018)

添加到收藏夹

Article Physics, Multidisciplinary

Characteristics of the bipolar resistive switching behavior in memory device with Au/ZnO/ITO structure

Hongjun Wang et al.

CHINESE JOURNAL OF PHYSICS (2018)

添加到收藏夹

Article Multidisciplinary Sciences

Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities

Gianluca Milano et al.

NATURE COMMUNICATIONS (2018)

添加到收藏夹

Article Computer Science, Information Systems

Solution-Processable ZnO Thin Film Memristive Device for Resistive Random Access Memory Application

Swapnil R. Patil et al.

ELECTRONICS (2018)

添加到收藏夹

Article Physics, Multidisciplinary

Resistive switching characteristics and resistive switching mechanism of Au/TiO2/FTO memristor

Yu Zhi-Qiang et al.

ACTA PHYSICA SINICA (2018)

添加到收藏夹

Article Chemistry, Physical

Mechanism of Nonvolatile Resistive Switching in ZnO/α-Fe2O3 Core-Shell Heterojunction Nanorod Arrays

Debasish Sarkar et al.

JOURNAL OF PHYSICAL CHEMISTRY C (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Resistive switching of Sn-doped In2O3/HfO2 core-shell nanowire: geometry architecture engineering for nonvolatile memory

Chi-Hsin Huang et al.

NANOSCALE (2017)

添加到收藏夹

Article Materials Science, Multidisciplinary

Self-templating faceted and spongy single-crystal ZnO nanorods: Resistive switching and enhanced piezoresponse

Alberto Quintana et al.

MATERIALS & DESIGN (2017)

添加到收藏夹

Article Physics, Applied

Anomalous rectification in a purely electronic memristor

Jingrui Wang et al.

APPLIED PHYSICS LETTERS (2016)

添加到收藏夹

Article Physics, Applied

Bias voltage-controlled ferromagnetism switching in undoped zinc oxide thin film memory device

S. S. Li et al.

APPLIED PHYSICS LETTERS (2016)

添加到收藏夹

Article Chemistry, Physical

A facile hydrothermal synthesis and memristive switching performance of rutile TiO2 nanowire arrays

Zhiqiang Yu et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2016)

添加到收藏夹

Article Chemistry, Physical

Hydrothermal synthesis and memristive switching behaviors of single-crystalline anatase TiO2 nanowire arrays

Zhiqiang Yu et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2016)

添加到收藏夹

Article Nanoscience & Nanotechnology

High On-Off Ratio Improvement of ZnO-Based Forming-Free Memristor by Surface Hydrogen Annealing

Yihui Sun et al.

ACS APPLIED MATERIALS & INTERFACES (2015)

添加到收藏夹

Article Chemistry, Physical

Effect of annealing temperature on photoluminescence and resistive switching characteristics of ZnO/Al2O3 multilayer nanostructures

Koppole C. Sekhar et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2015)

添加到收藏夹

Article Chemistry, Multidisciplinary

Influence of Incorporated Pt-Fe2O3 Core-Shell Nanoparticles on the Resistive Switching Characteristics of ZnO Thin Film

E. J. Yoo et al.

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (2015)

添加到收藏夹

Article Chemistry, Multidisciplinary

Magnetic-field and white-light controlled resistive switching behaviors in Ag/[BiFeO3/gamma-Fe2O3]/FTO device

Bai Sun et al.

RSC ADVANCES (2015)

添加到收藏夹

Article Nanoscience & Nanotechnology

Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior

Kai-De Liang et al.

ACS APPLIED MATERIALS & INTERFACES (2014)

添加到收藏夹

Article Chemistry, Multidisciplinary

Reliable Control of Filament Formation in Resistive Memories by Self-Assembled Nanoinsulators Derived from a Block Copolymer

Byoung Kuk You et al.

ACS NANO (2014)

添加到收藏夹

Article Physics, Applied

Effect of oxide/oxide interface on polarity dependent resistive switching behavior in ZnO/ZrO2 heterostructures

Zedong Xu et al.

APPLIED PHYSICS LETTERS (2014)

添加到收藏夹

Article Physics, Applied

Structural and resistance switching properties of epitaxial Pt/ZnO/TiN/Si(001) heterostructures

Sandhyarani Punugupati et al.

JOURNAL OF APPLIED PHYSICS (2014)

添加到收藏夹

Article Nanoscience & Nanotechnology

Manipulated Transformation of Filamentary and Homogeneous Resistive Switching on ZnO Thin Film Memristor with Controllable Multistate

Chi-Hsin Huang et al.

ACS APPLIED MATERIALS & INTERFACES (2013)

添加到收藏夹

Article Chemistry, Multidisciplinary

A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non-Volatile Memory Devices

Jinjoo Park et al.

ADVANCED MATERIALS (2013)

添加到收藏夹

Article Physics, Applied

A ZnO nanowire resistive switch

K. R. G. Karthik et al.

APPLIED PHYSICS LETTERS (2013)

添加到收藏夹

Article Physics, Applied

Stochastic memristive nature in Co-doped CeO2 nanorod arrays

Adnan Younis et al.

APPLIED PHYSICS LETTERS (2013)

添加到收藏夹

Article Physics, Applied

Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

Jian Zhang et al.

APPLIED PHYSICS LETTERS (2013)

添加到收藏夹

Article Chemistry, Physical

Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition

Jian Zhang et al.

APPLIED SURFACE SCIENCE (2013)

添加到收藏夹

Article Electrochemistry

Forming-free bipolar memristive switching of ZnO films deposited by cyclic-voltammetry

Jian-Shiou Huang et al.

ELECTROCHIMICA ACTA (2013)

添加到收藏夹

Article Chemistry, Physical

Engineering electrodeposited ZnO films and their memristive switching performance

Ahmad Sabirin Zoolfakar et al.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2013)

添加到收藏夹

Article Chemistry, Multidisciplinary

ZnO1-x Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application

Chi-Hsin Huang et al.

ACS NANO (2012)

添加到收藏夹

Article Materials Science, Multidisciplinary

Cost-effective fabrication of memristive devices with ZnO thin film using printed electronics technologies

Kyung Hyun Choi et al.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2012)

添加到收藏夹

Article Electrochemistry

High Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device

Wen-Yuan Chang et al.

JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2012)

添加到收藏夹

Article Engineering, Electrical & Electronic

Multibit Operation of TiOx-Based ReRAM by Schottky Barrier Height Engineering

Jubong Park et al.

IEEE ELECTRON DEVICE LETTERS (2011)

添加到收藏夹

Article Physics, Applied

Resistive switching behaviors of ZnO nanorod layers

Wen-Yuan Chang et al.

APPLIED PHYSICS LETTERS (2010)

添加到收藏夹

Article Multidisciplinary Sciences

The missing memristor found

Dmitri B. Strukov et al.

NATURE (2008)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.