期刊
RSC ADVANCES
卷 6, 期 111, 页码 110344-110348出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ra23534d
关键词
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资金
- Natural Sciences and Engineering Research Council (NSERC) of Canada
- Manitoba Institute for Materials
- Mitacs Globalink
- Minister of Education and Advanced Learning, Manitoba
- Western Economic Diversification (WED)
- Canada Foundation for Innovation (CFI)
- Canada Research Chairs Program
- Manitoba Research and Innovation Fund
- University of Manitoba
We present a facile approach that achieves four-point electrical characterization of silicon microwires fabricated using a bottom-up vapour-liquid-solid process. Tungsten probes are brought into direct contact with silicon microwires using piezoelectrically driven probe actuators. This technique can be applied to silicon microwires without the need for high-temperature lithographic preparation or the additional use of In/Ga to ensure reliable electrical contact between the probe and the wire. Comparison between two-point probe and four-point probe measurements demonstrates the robustness of the four-point approach. Significantly, the four-point characterization technique is not impacted by native oxides at the microwire/tungsten probe interface. The four-point technique can be applied to sense electrical responses in half-cell and full-cell representations of artificial photosynthesis systems, regardless of catalysts or functional groups attached to the microwire sidewalls.
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