期刊
MATERIALS
卷 9, 期 12, 页码 -出版社
MDPI
DOI: 10.3390/ma9121007
关键词
review; atomic layer deposition; plasma-enhanced ALD (PEALD); silicon nitride; thermal ALD; surface reactions
类别
资金
- IT R&D program of MOTIE/KEIT [10048933]
- Dow Corning Corporation
- Toshiba-Mitsubishi-Electric Industrial Systems Corporation (TMEIC)
- Future Semiconductor Device Technology Development Program - KEIT by MOTIE (Ministry of Trade, Industry and Energy) [10045216]
- COSAR (Consortium of Semiconductor Advanced Research) in Korea
With the continued miniaturization of devices in the semiconductor industry, atomic layer deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the inherent benefits of this process compared to other silicon nitride thin film deposition techniques. These benefits include not only high conformality and atomic-scale thickness control, but also low deposition temperatures. Over the past 20 years, recognition of the remarkable features of SiNx ALD, reinforced by experimental and theoretical investigations of the underlying surface reaction mechanism, has contributed to the development and widespread use of ALD SiNx thin films in both laboratory studies and industrial applications. Such recognition has spurred ever-increasing opportunities for the applications of the SiNx ALD technique in various arenas. Nevertheless, this technique still faces a number of challenges, which should be addressed through a collaborative effort between academia and industry. It is expected that the SiNx ALD will be further perceived as an indispensable technique for scaling next-generation ultra-large-scale integration (ULSI) technology. In this review, the authors examine the current research progress, challenges and future prospects of the SiNx ALD technique.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据