期刊
ADVANCED ENERGY MATERIALS
卷 6, 期 7, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.201502269
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资金
- US Department of Energy [DOE DE-SC0010831]
- National Natural Science Foundation of China [51471061, 512710698]
Despite the unfavorable band structure with twofold degeneracy at the valence band maximum, MgAgSb is still an excellent p-type thermoelectric material for applications near room temperature. The intrinsically weak electron-phonon coupling, reflected by the low deformation potential E-def approximate to 6.3 eV, plays a crucial role in the relatively high power factor of MgAgSb. More importantly, Li is successfully doped into Mg site to tune the carrier concentration, leading to the resistivity reduction by a factor of 3 and a consequent increase in power factor by approximate to 30% at 300 K. Low lattice thermal conductivity can be simultaneously achieved by all-scale hierarchical phonon scattering architecture including high density of dislocations and nanoscale stacking faults, nanoinclusions, and multiscale grain boundaries. Collectively, much higher average power factor approximate to 25 mu W cm(-1) K-2 with a high average ZT approximate to 1.1 from 300 to 548 K is achieved for 0.01 Li doping, which would result in a high output power density approximate to 1.56 W cm(-2) and leg efficiency approximate to 9.2% by calculations assuming cold-side temperature T-c = 323 K, hot-side temperature T-h = 548 K, and leg length = 2 mm.
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