期刊
NATURE COMMUNICATIONS
卷 7, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms13713
关键词
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资金
- National Research Foundation of Korea [NRF-2009-0093818, NRF-2014R1A4A1071686]
- Korea Evaluation Institute of Industrial Technology (KEIT) - Ministry of Trade, Industry and Energy (MOTIE) [10050296]
- Energy Efficiency AMP
- Resources program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Korean Ministry of Knowledge Economy [20132020000110]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10050296] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [GP2016-0025] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2009-0093818, 21A20151213022] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733 K in the most highly doped n-type SnSe with a carrier density of -2.1 x 10(19) cm(-3) at 773 K.
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