期刊
NATURE COMMUNICATIONS
卷 7, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms13261
关键词
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资金
- National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning (MSIP) [2015M3D1A1070465, NRF-2014R1A2A1A11050290]
- Ministry of Trade, Industry & Energy of Korean government [10044723]
- Korea Semiconductor Research Consortium
- MSIP
- POSTECH
- Basic Science Research through the NRF - Ministry of Education [NRF-2011-0006744]
- Global Frontier Research Program [2011-0031629]
- NRF - Korean government (MSIP) [2012M3A7B4049802]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10044723] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2016-PAL, 2014R1A2A1A11050290, 2015M3D1A1070465, 2012M3A7B4049802] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Graphene is currently at the forefront of cutting-edge science and technology due to exceptional electronic, optical, mechanical, and thermal properties. However, the absence of a sizeable band gap in graphene has been a major obstacle for application. To open and control a band gap in functionalized graphene, several gapping strategies have been developed. In particular, hydrogen plasma treatment has triggered a great scientific interest, because it has been known to be an efficient way to modify the surface of single-layered graphene and to apply for standard wafer-scale fabrication. Here we show a monolayer chemical-vapour-deposited graphene hydrogenated by indirect hydrogen plasma without structural defect and we demonstrate that a band gap can be tuned as wide as 3.9 eV by varying hydrogen coverage. We also show a hydrogenated graphene field-effect transistor, showing that on/off ratio changes over three orders of magnitude at room temperature.
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