4.8 Article

Directional interlayer spin-valley transfer in two-dimensional heterostructures

期刊

NATURE COMMUNICATIONS
卷 7, 期 -, 页码 -

出版社

NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms13747

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资金

  1. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division [DE-SC0008145, SC0012509]
  2. Croucher Foundation (Croucher Innovation Award)
  3. RGC of Hong Kong [HKU17305914P]
  4. HKU ORA
  5. US DoE, BES, Materials Sciences and Engineering Division
  6. Elemental Strategy Initiative
  7. JSPS
  8. State of Washington
  9. Cottrell Scholar Award
  10. Boeing Distinguished Professorship in Physics

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Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. Here, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe2-WSe2 heterostructure. Using non-degenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weakly dependent on the twist angle between layers. Our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in two-dimensional spin/valleytronic devices for storing and processing information.

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