期刊
NATURE COMMUNICATIONS
卷 7, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms10349
关键词
-
资金
- Welch Foundation [F-1672]
- US National Science Foundation [DMR-1306878, EFMA-1542747]
- RGC of HKSAR [HKU9/CRF/13G]
- HKU R.O.P.
- KAUST (Saudi Arabia)
- MOST
- TCECM
- Academia Sinica (Taiwan)
- NT 3.0 Program, Ministry of Education
- [AOARD-134137]
- Direct For Mathematical & Physical Scien [1306878] Funding Source: National Science Foundation
- Directorate For Engineering [1542747] Funding Source: National Science Foundation
Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal dichalcogenides thin films have sensitive layer dependence, it is natural to create lateral heterojunctions (HJs) using the same materials with different thicknesses. Here we show the real space image of electronic structures across the bilayer-monolayer interface in MoSe2 and WSe2, using scanning tunnelling microscopy and spectroscopy. Most bilayer-monolayer HJs are found to have a zig-zag-orientated interface, and the band alignment of such atomically sharp HJs is of type-I with a well-defined interface mode that acts as a narrower-gap quantum wire. The ability to utilize such commonly existing thickness terraces as lateral HJs is a crucial addition to the tool set for device applications based on atomically thin transition metal dichalcogenides, with the advantage of easy and flexible implementation.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据