期刊
NATURE COMMUNICATIONS
卷 7, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms12841
关键词
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资金
- Microsoft Project Q
- Danish National Research Foundation
- Villum Foundation
- Marie Curie Fellowship [659653]
- ERC Synergy Grant
- ERC Starting Grant
- Foundation for Fundamental Research on Matter (FOM)
- Netherlands Organization for Scientific Research (NWO/OCW), Frontiers of Nanoscience program
- NSF [DMR 1121053]
- Marie Curie Actions (MSCA) [659653] Funding Source: Marie Curie Actions (MSCA)
Coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting electronics, and new topological states of matter. One route towards topological matter is by coupling a 2D electron gas with strong spin-orbit interaction to an s-wave superconductor. Previous efforts along these lines have been adversely affected by interface disorder and unstable gating. Here we show measurements on a gateable InGaAs/InAs 2DEG with patterned epitaxial Al, yielding devices with atomically pristine interfaces between semiconductor and superconductor. Using surface gates to form a quantum point contact (QPC), we find a hard superconducting gap in the tunnelling regime. When the QPC is in the open regime, we observe a first conductance plateau at 4e(2)/h, consistent with theory. The hard-gap semiconductor-superconductor system demonstrated here is amenable to top-down processing and provides a new avenue towards low-dissipation electronics and topological quantum systems.
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