期刊
NATURE COMMUNICATIONS
卷 7, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms12902
关键词
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资金
- German Science Foundation [SFB1073, SFB TRR 173, DFG-BA 2177/9-1]
- Department of Energy (DOE) Office of Basic Energy Sciences X-Ray Scattering Program Award [DE-SC0002002]
- Gordon and Betty Moore Foundation EPiQS Award [GBMF4538]
- Swedish Research Council (Vetenskapsradet)
- [DFG/GSC 266]
- U.S. Department of Energy (DOE) [DE-SC0002002] Funding Source: U.S. Department of Energy (DOE)
Capturing the dynamic electronic band structure of a correlated material presents a powerful capability for uncovering the complex couplings between the electronic and structural degrees of freedom. When combined with ultrafast laser excitation, new phases of matter can result, since far-from-equilibrium excited states are instantaneously populated. Here, we elucidate a general relation between ultrafast non-equilibrium electron dynamics and the size of the characteristic energy gap in a correlated electron material. We show that carrier multiplication via impact ionization can be one of the most important processes in a gapped material, and that the speed of carrier multiplication critically depends on the size of the energy gap. In the case of the charge-density wave material 1T-TiSe2, our data indicate that carrier multiplication and gap dynamics mutually amplify each other, which explains-on a microscopic level-the extremely fast response of this material to ultrafast optical excitation.
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