期刊
IEEE PHOTONICS JOURNAL
卷 8, 期 6, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2016.2633402
关键词
Tunable lasers; semiconductor lasers; waveguide devices
资金
- IOP Photonic Devices program of Rijksdienst voor Ondernemend Nederland: a part of the Netherlands Ministry of Economic Affairs
- Netherlands Ministry of Education, Culture and Science
We describe the first demonstration and characterization of an optically integrated InP-Si3N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a Si3N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than - 135 dBc/Hz.
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