期刊
IEEE PHOTONICS JOURNAL
卷 8, 期 1, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2016.2516911
关键词
InGaN; flip-chip; electroplating; thin-film LEDs; concavely patterned surface
资金
- National High Technology Research and Development Program of China (863 Program) [2014AA032609]
- National Natural Science Foundation of China [61404050, 61504044]
- Strategic Emerging Industry Special Funds of Guangdong Province [2012A080302003]
- Major Scientific and Technological Special Project of Guangdong Province [2014B010119002]
In this paper, a p-pad-up InGaN-based flip-chip (FC) thin-film light-emitting diode (TFLED) on electroplating metallic substrate was fabricated by a combination of electrodes isolation, FC configuration, copper electroplating, and laser lift-off techniques. This allowed formation of n-contacts on Ga-polar n-GaN and superior design of n-electrode pattern, resulting in an improved electrical performance when compared with the vertical-structure (VS) TFLED, in which the n-contacts need to be formed on N-polar n-GaN. In addition, the light output power was enhanced through this architecture due to the uniform current distribution and the absence of pads and wires on top of the FC-TFLEDs. It is found that the wall-plug efficiency of the FC-TFLEDs is 23.6% higher than that of the VS-TFLEDs. Moreover, the FC-TFLEDs with a concavely patterned surface were fabricated from the LED wafer with patterned sapphire substrate. Further improvement in output power was achieved when compared with that of the FC-TFLED fabricated from the LED wafer with flat sapphire substrate.
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