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A Review of Graphene on NEMS

期刊

RECENT PATENTS ON NANOTECHNOLOGY
卷 10, 期 1, 页码 3-10

出版社

BENTHAM SCIENCE PUBL LTD
DOI: 10.2174/187221051001160322151412

关键词

Application; electromechanical properties; graphene; NEMS; production

资金

  1. Research Program - National Science Foundation of China [61176130]

向作者/读者索取更多资源

Background: Graphene is a new type of two-dimensional crystal material, and its single atomic layer structure shows many excellent physical and chemical properties such as large specific surface area, good electrical conductivity and high Young's modulus. However, few relevant patents to the topic have been reviewed and cited. This paper mainly deals with the methods of the preparations of graphene and graphene applications in NEMS sensors, NEMS devices, optics, energy storage, and biomedical fields. Methods: At present, compared with the less effective experimental research method, the numerical simulation method has become an effective research approach. Molecular dynamics is widely used in the numerical simulation calculation. Molecular dynamics can simulate the change process of graphene in real environments. Molecular dynamics reveals the microscopic deformation under the action of external load. Results: The analysis process of two structures is mainly through the external stretched or compressed force exerted on the graphene. The Young's modulus of the simulated graphene is about 0.86TPa. The simulated tensile strength is about 121GPa. The resonance frequency of graphene resonators can be changed by the tension of both ends of the beam. As the initial strain increases, the resonance frequencies also increase. For very small initial axial -strain, the tunable range reached above several hundred gigahertz. As the initial axial -strain of graphene increased, the tunable range decreased. Conclusion: Due to the unique properties and potential applications of graphene, it has aroused an extensive research boom in nano science world. Graphene is considered as one of the most promising materials of next generation electronic devices.

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