期刊
SCIENCE OF ADVANCED MATERIALS
卷 8, 期 4, 页码 884-890出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/sam.2016.2549
关键词
BCl3; Plasma Doping; Trapped-Doping; Multilayer Graphene; Low Damage
资金
- Nano Material Technology Development Program, through National Research Foundation of Korea - Ministry of Education, Science and Technology [2012M3A7B4035323]
- Ministry of Trade, Industry and Energy [10048504]
- Korea Semiconductor Research Consortium support program for the development of the future semiconductor device
In this paper, we use low energy BCl3 plasma for the doping of graphene, and investigate its effect on graphene sheet resistance. In particular, for few-layer graphene, we use a cyclic trap-doping technique to control the dopants between the graphene layers. By using the cyclic tra-doping with the low energy BCl3 plasma, we obtain significant reduction of sheet resistance (similar to 75%), while maintaining high optical transparency, flexibility, conductivity, and thermal stability. Raman data show that the graphene layers are p-type doped with no noticeable damage during the doping. By optimizing the doping condition, we obtain sheet resistance and optical transmittance of BCl3 doped trilayer graphene of 100 Omega/sq and 92% at 550 nm, respectively, which is very compatible with flexible display devices.
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