期刊
VACUUM
卷 132, 期 -, 页码 91-94出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2016.07.035
关键词
ITO thin film; RF magnetron sputtering; In situ crystallization; Preferential orientation; Texture coefficient
资金
- Department of Atomic Energy, Board of Research on Nuclear Studies (DAE-BRNS, BARC, India) [2010/34/42/BRNS]
- UGC-DAE CSR collaborative project [CSR-IC/CRS-94/2014-15/600]
ITO thin films are prepared on glass substrates by radio frequency magnetron sputtering at sputtering powers varying from SOW to 200W. Structural and morphological investigation by X-ray diffraction and scanning electron microscopy of the films reveals them to have progressively undergone in situ crystallization with increasing sputtering power, without any need of intentional substrate heating. This result is highly useful in applications where ITO film coatings are to be fabricated on substrates which cannot withstand high temperature. Further, the preferential orientation of the thin film planes along [100] direction is found to produce drastic enhancements in the carrier mobility and electrical conductivity without much affecting the transparency of the thin films. (C) 2016 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据