期刊
THIN SOLID FILMS
卷 612, 期 -, 页码 202-207出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2016.06.018
关键词
SnS; Sulfurization; SnS2 secondary phase; Earth abundant; Solar cells
类别
资金
- Spanish MINECO within the Ramon y Cajal programme [RYC-2011-08521]
SnS thin films were grown by sulfurization of Sn layers evaporated by electron beam. The effect of sulfurization parameters, such as temperature and pressure, on the properties of tin sulfide layers has been investigated. Ar pressure used during the sulfurization has a strong impact on the development of a proper SnS/Mo back interface. However, the sulfurization temperature is the parameter that regulates the formation of an orthorhombic single phase SnS thin film with the optimum properties to be used as absorber for solar cell devices. Sulfurization temperature of 220 degrees C for 240 min led to the formation of single phase tin sulfide layers. Direct band gap energy about 1.2 eV has been determined. (C) 2016 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据