期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 99, 期 -, 页码 108-112出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2016.04.002
关键词
Diffusion length; Grain boundaries; EBIC; XBIC
The application of induced current methods for a quantitative description of multi crystalline silicon solar cell properties is demonstrated. For the minority carriers' diffusion length (L) and grain boundary recombination velocity (Vs) determination three types of measurements were used. They included the measurement of EBIC signal dependence on electron beam energy and of EBIC and XBIC grain boundary contrast profiles. The L and Vs values obtained by means of minimization the residual function between measured and model induced current curves are presented. The inaccuracy of obtained parameters is discussed for each of three types of measurements. (C) 2016 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据